Speichertechnologie II

Prof.Dr.-Ing. Thomas Mikolajick

Institut für Halbleiter- und Mikrosystemtechnik

Professur für nanoelektronische Materialien/Namlab GmbH

Field of study: Nanoelectronic Systems, Microelectronic MEl

Lecture: Memory Technology II (equals Speichertechnologie II – the courselanguage is English)

  • Time flow: 2/1/0 (winter semester)
  • Start: Wintersemester
  • Lecture:
  • Tutorial:


  • First part of the module Semiconductor Technology
  • Materials for Nanoelectronics and Vacuum Technology
  • Memory Technology I (recommended, but not necessary; the first part of the lecture can be attended in the next summer semester)

Objective of the lecture

The second part of the module ‘Memory Technology’ places the emphasis on innovative semiconductor memories, which are an alternative to the established memory technologies. Generally these memories are in research respectively development stage. Only a few concepts are available in the market for special applications.

After completion of the lecture the students have the competence to optimize and develop new generations of existing memory concepts. Based on the physical effects they will also be able to develop new memory concepts. Furthermore the students are able to evaluate areas of application for the memory concept and are aware of their limitations.

Content of the lecture

The lecture covers the concept and technology of several alternative memories. While conventional semiconductor memories – like Flash, DRAM or SRAM – use charge to store the data, these innovative memories use other material effects. In detail ferroelectric memories (FeRAM), magnetoresistive memories (MRAM), phase change memories (PCM), resistive memories (RRAM), organic memories, molecular memories and probe storage will be discussed. Each chapter starts with fundamentals and history, then the memory effect will be explained. The next part derives the design and operation of the memory cell in an array from the physical limitations. Afterwards reliability aspects and the current status are elucidated.


  • Overview of alternative memory concepts

  • Ferroelectric memories (FeRAM)

  • Magnetoresistive memories (MRAM)

  • Phase change memories (PCM)

  • Resistive memories (RRAM)

  • Organic memories and molecular memories

  • Probe storage


Deepens and completes the lecture.       


OPAL link to presentations, documents, ...

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Kerstin Kunz
Letzte Änderung: 31.07.2016