Publications 2010

41 bis 50 von 65 Einträgen

Knaut, M.; Geidel, M.; Junige, M.; Krause, M.; Albert, M.; Bartha, J.W.: In-situ analysis of ultra thin ALD capacitor stacks for novel applications. In: Proceeding of AVS ALD Conference 2010, Seoul, Korea (2010)

Zimmermann, T.; Strobel, C.; Albert, M.; Beyer, W.; Gordijn, A.; Flikweert, A.J.; Kuske, J.; Bartha, J.W.: Inline deposition of microcrystalline silicon solar cells using a linear plasma source. In: Phys. Status Solidi C 7 (2010), Nr. 3-4, S. 1097–1100

Schmidt, D.; Knaut, M.; Hossbach, C.; Albert, M.; Hintze, B.; Dussarrat, C.; Bartha, J.W.: Atomic Layer Deposition of Ta-N-Based Thin Films Using a Tantalum Source. In: Journal of The Electrochemical Society 157 (2010), S. 638–642

Roessler, T.; Gluch, J.; Albert, M.; Bartha, J.W.: Electrical characterisation of HfYO MIM-structures deposited by ALD. In: Thin Solid Films 518 (2010), S. 4680–4683

Bartha, J.W.; Borst, C. L.; DeNardis, D.; Papa Rao , S. S.; Kim, H.; Naeemi, A.; Nelson, A.; Wook Ro, H.; Toma, D.: Advanced Interconnects and Chemical Mechanical Planarization for Micro- and Nanoelectronics : Materials Research Sciety, Symposium Proceedings Volume 1249 (2010). - ISBN 978-1-60511-226-8

Wojcik, H.; Kaltofen, R.; Merkel, U.; Krien, C.; Strehle, S.; Gluch, J.; Knaut, M.; Wenzel, C.; Preusse, A.; Bartha, J.W.; Geidel, M.; Adolphi, B.; Neumann, V.; Liske, R.: Electrical Evaluation of Ru-W(-N), Ru-Ta(-N) and Ru-Mn films as Cu diffusion barriers. In: AMC 2010, Albany, N.Y. 3.-6.Oct. 2010) in Microelectronic Engineering, article submitted (2010)

Niese, S.; Hecker, M.; Liske, R.; Ritz, Y.; Zschech, E.; Wojcik, H.; Bartha, J.W.; Wud, Z.; Hod, P.S.: Assessment Of Mechanical Properties Of Nanoscale Structures For Microprocessor Manufacturing . In: 11th International Workshop on Stress-Induced Phenomena in Metallization April 12 - 14, 2010, Dresden Poster (2010)

Wojcik, H.; Kaltofen, R.; Merkel, U.; Krien, C.; Strehle, S.; Gluch, J.; Knaut, M.; Liske, R.; Wenzel, C.; Bartha, J.W.: Evaluation of novel Ru-W(-N) films as Cu diffusion barriers for sub 32nm BEOL technology . In: Nanofair 2010, Dresden Poster (2010)

Wojcik, H.; Merkel, U.; Jahn, A.; Richter, K.; Junige, M.; Klein, C.; Gluch, J.; Albert, M.; Munnik, F.; Wenzel, C.; Bartha, J.W.: Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements. In: Microelectronic Engineering, In Press, Corrected Proof, Available online 11 July 2010 (MAM 2010 als Poster) (2010)

Schumacher, H.; Künzelmann, U.; Bartha, J.W.: Characterisation of Surface Processes during Oxide CMP by in situ FTIR Spectroscopy with Microstructured Reflection Elements at Silicon Wafers. In: Advanced Interconnects and Chemical Mechanical Planarization for Micro- and Nanoelectronics, MRS Spring Meeting 2010, San Francisco, CA, 5. - 7. April 2010 Materials Research Society - Symposium Proceedings, 1249 (2010), S. 135–140

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Dr. Steffen Strehle
Last modified: Sep 14, 2016