Veröffentli­chungen 2013

11 bis 20 von 50 Einträgen

Knaut, M.; Junige, M.; Neumann, V.; Wojcik, H.; Henke, T.; Hossbach, C.; Hiess, A.; Albert, M.; Bartha, J.W.: Atomic layer deposition for high aspect ratio through silicon vias. In: Microelectronic Engineering 107 (2013), S. 80–83

Geidel, M.; Junige, M.; Albert, M.; Bartha, J.W.: In-situ analysis on the initial growth of ultra-thin ruthenium films with atomic layer deposition. In: Microelectronic Engineering 107 (2013), S. 151–155

Woijcik, H.; Hossbach, C.; Kubasch, C.; Verdonck, P.; Barbarin, Y.; Merkel, U.; Bartha, J. W.; Hübner, R.; Engelmann, H.-J.; Friedemann, M.: Enhanced growth and Cu diffusion barrier properties of thermal ALD TaNC films in Cu/low-k interconnects. In: Microelectronic Engineering 110 (2013), S. 29–34

Vasilev, B.; Bott, S.; Rzehak, R.; Bartha, J. W.: Pad roughness evolution during break-in and its abrasion due to the pad-wafer contact in oxide CMP. In: Microelectronic Engineering 111 (2013), S. 21–28

Lüssem, B.; Tietze, M. L.; Kleemann, H.; Hossbach, C.; Bartha, J. W.; Zakhidov, A.; Leo, K.: Doped organic transistors operating in the inversion and depletion regime. In: Nature Communications 4 (2013), Nr. Article number: 2775

Benner, F.; Knaut, M.; Jordan, P. M.; Dirnstorfer, I.; Ocker, J.; Bartha, J. W.; Mikolajick, T.: Improvement of Al2O3 Passivation by Ti-Doping. In: 28th European Photovoltaic Solar Energy Conference and Exhibition 2BV.1.38 (2013), S. 1156–1161

Leszczynska, B.; Fischer, D.; Albert, M.; Bartha, J.W.; Jordan, P.M.; Simon, D.K.; Dirnstorfer, I.; Kuske, J.: In-Situ H2-Plasma Pretreatment and Amorphous Silicon Deposition for Heterojunction Solar Cells at Very High Plasma Excitation Frequency. In: Proceedings of 28th European Photovoltaic Solar Energy Conference and Exhibition, Paris, Frankreich, 30.09.-04.10.2013 (2013), S. 1340–1343

Müller, M. R.; Gumprich, A.; Schütte, F.; Kallis, K.; Künzelmann, U.; Engels, S.; Stampfer, C.; Wilck, N.; Hadam, B.; Knoch, J.: Triple-Gate Structures for Advanced Field-Effect-Transistor Devices. In: 39th International Conference on Micro and Nano Engineering (MNE 2013) London, GB, September 16-19, 2013 (2013)

Müller, M. R.; Ecik, E.; Haas, F.; Rieger, T.: Buried Triple-Gate Structures for InAs-Nanowire Field-Effect Transistor Devices. In: Materials Research Society (MRS) Fall Meeting & Exhibit 2013, Boston, Massachusetts, USA, December 1-6, 2013 (2013)

Künzelmann, U.; Müller, M. R.; Menzel, S.; Lin, C.; Dysard, J.; Bartha, J. W.; Knoch, J.: Morphological and Topological Effects during the CMP of Aluminium. In: LEVITRONIX Ultrapure User Conference 2013 and 29th European CMP Users Meeting Spring 2013, Zurich/Switzerland, April 11-12, 2013 (2013)

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Dr. Steffen Strehle
Letzte Änderung: 14.09.2016