Konferenzen 231 bis 240 von 428 EinträgenGraham, F.; Mudivarthi, C.; Yoo, J.; Marschner, U.; Neubert, H.; Flatau, A.B.: FEM-simulation-based characterization of a magnetostrictive gyro sensor. In: Proc. 11th Joint MMM-Intermag Conf., 18-22 January 2010, Washington, DC, USA J. Appl. Phys. 107, 09E705 (2010)Marschner, U.; Starke, E.; Pfeifer, G.; Fischer, W.-J.; Flatau, A.B.: Models for optimizing magnetoelastic thin film planar coil sensor design. In: Proc. 11th Joint MMM-Intermag Conf., 18-22 January 2010, Washington, DC, USA (2010)Knaut, M.; Geidel, M.; Krause, M.; Albert, M.; Bartha, J.W.: Ultra-thin AlxTi1-xOy films deposited by atomic layer deposition for DRAM capacitors and quantum devices. In: Proceeding of Nanofair Conference 2010, Dresden, Germany (2010)Junige, M.; Knaut, M.; Geidel, M.; Albert, M.; Bartha, J.W.: In-situ characterization of ruthenium and ruthenium dioxide film growth. In: Proceeding of Baltic ALD / GerALD Conference 2010, Hamburg, Germany (2010)Knaut, M.; Geidel, M.; Junige, M.; Krause, M.; Albert, M.; Bartha, J.W.: In-situ analysis of ultra thin ALD capacitor stacks for novel applications. In: Proceeding of AVS ALD Conference 2010, Seoul, Korea (2010)Wojcik, H.; Kaltofen, R.; Merkel, U.; Krien, C.; Strehle, S.; Gluch, J.; Knaut, M.; Wenzel, C.; Preusse, A.; Bartha, J.W.; Geidel, M.; Adolphi, B.; Neumann, V.; Liske, R.: Electrical Evaluation of Ru-W(-N), Ru-Ta(-N) and Ru-Mn films as Cu diffusion barriers. In: AMC 2010, Albany, N.Y. 3.-6.Oct. 2010) in Microelectronic Engineering, article submitted (2010)Niese, S.; Hecker, M.; Liske, R.; Ritz, Y.; Zschech, E.; Wojcik, H.; Bartha, J.W.; Wud, Z.; Hod, P.S.: Assessment Of Mechanical Properties Of Nanoscale Structures For Microprocessor Manufacturing . In: 11th International Workshop on Stress-Induced Phenomena in Metallization April 12 - 14, 2010, Dresden Poster (2010)Wojcik, H.; Kaltofen, R.; Merkel, U.; Krien, C.; Strehle, S.; Gluch, J.; Knaut, M.; Liske, R.; Wenzel, C.; Bartha, J.W.: Evaluation of novel Ru-W(-N) films as Cu diffusion barriers for sub 32nm BEOL technology . In: Nanofair 2010, Dresden Poster (2010)Wojcik, H.; Merkel, U.; Jahn, A.; Richter, K.; Junige, M.; Klein, C.; Gluch, J.; Albert, M.; Munnik, F.; Wenzel, C.; Bartha, J.W.: Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements. In: Microelectronic Engineering, In Press, Corrected Proof, Available online 11 July 2010 (MAM 2010 als Poster) (2010)Schumacher, H.; Künzelmann, U.; Bartha, J.W.: Characterisation of Surface Processes during Oxide CMP by in situ FTIR Spectroscopy with Microstructured Reflection Elements at Silicon Wafers. In: Advanced Interconnects and Chemical Mechanical Planarization for Micro- and Nanoelectronics, MRS Spring Meeting 2010, San Francisco, CA, 5. - 7. April 2010 Materials Research Society - Symposium Proceedings, 1249 (2010), S. 135–140Zurück 20 21 22 23 24 25 26 27 28 29 WeiterDiese Informationen werden vom Vorgängersystem FIS bereitgestellt.