Veröffentlichte Journal-Beiträge

31 bis 40 von 107 Einträgen

Müller, M. R.; Gumprich, A.; Schütte, F.; Kallis, K.; Künzelmann, U.; Engels, S.; Engels, S.; Stampfer, C.; Wilck, N.; Knoch, J.: Buried Triple-Gate Structures for Advanced Field-Effect Transistor Devices. In: Microelectronic Engineering 119 (2014), S. 95–99

Seiboth, F.; Scholz, M.; Patommel, J.; Hoppe, R.; Wittwer, F.; Reinhardt, J.; Seidel, J.; Knaut, M.; Jahn, A.; Richter, K.; Bartha, J. W.; Falkenberg, G.; Schroer, C. G.: Hard x-ray nanofocusing by refractive lenses of constant thickness. In: Appl. Phys. Lett. 105, 131110 (2014) (2014)

Henke, T.; Bartha, J.W.; Rebohle, R.; Merkel, U.; Hübner, R.; Albert, M.; Skorupa, W.: Formation of regularly arranged large grain silicon islands by using embedded micro mirrors in the flash crystallization of amorphous silicon. In: Journal of Applied Physics 115, 034301 (2014)

Singh, A.; Klumbies, H.; Schröder, U.; Müller-Meskamp, L.; Geidel, M.; Knaut, M.; Hoßbach, C.; Albert, M.; Leo, K.; Mikolajick, T.: Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations. In: Appl. Phys. Lett. 103, 233302 (2013)

Vasilev, B.; Bott, S.; Rzehak, R.; Liske, R.; Bartha, J. W.: A method for characterizing the pad surface texture and modeling its impact on the planarization in CMP. In: Microelectronic Engineering 104 (2013), S. 48–57

Lotin, A.A.; Novodvorsky, O.A.; Khramova, O.D.; Parshina, L.S.; Lebedev, F.V.; Bartha, J.W.; Wenzel, C.: Influence of growth temperature on physical properties of ZnO films produced by pulsed laser deposition method. In: Optical Materials 35 (2013), Nr. 8, S. 1564–1570

Kubasch, C.; Bartha, J.W.: Water uptake of a low-k dielectric film: Combining capacitance and gravimetric measurements. In: Microelectronic Engineering 106 (2013), S. 177–181

Knaut, M.; Junige, M.; Neumann, V.; Wojcik, H.; Henke, T.; Hossbach, C.; Hiess, A.; Albert, M.; Bartha, J.W.: Atomic layer deposition for high aspect ratio through silicon vias. In: Microelectronic Engineering 107 (2013), S. 80–83

Geidel, M.; Junige, M.; Albert, M.; Bartha, J.W.: In-situ analysis on the initial growth of ultra-thin ruthenium films with atomic layer deposition. In: Microelectronic Engineering 107 (2013), S. 151–155

Woijcik, H.; Hossbach, C.; Kubasch, C.; Verdonck, P.; Barbarin, Y.; Merkel, U.; Bartha, J. W.; Hübner, R.; Engelmann, H.-J.; Friedemann, M.: Enhanced growth and Cu diffusion barrier properties of thermal ALD TaNC films in Cu/low-k interconnects. In: Microelectronic Engineering 110 (2013), S. 29–34

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Philipp Wenskus
Letzte Änderung: 05.10.2022