Publications

2026

• Junctionless Silicon Nanowire Transistors without the Use of Impurity DopingNagarajan, S., König, D., Ratschinski, I., Galderisi, G., Shams, S., Mikolajick, T., Hiller, D. & 1 others, 10 Mar 2026, In: ACS nano. 20, 9, p. 7508-7517, 10 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Does a Morphotropic Phase Boundary Exist in Zr_xHf_1-xO₂-Based Thin Films?Vishnumurthy, P., Ganser, R., Kim, D. G., Jeon, I., Jung, C. H., Lim, H., Mikolajick, T. & 3 others, 5 Mar 2026, In: Advanced functional materials. 36, 19, 12 p., e22802Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO₂-Based MemristorsWu, C., Shen, H., Schroedter, R., Peng, C., Hoffman, H., Slesazeck, S., Tetzlaff, R. & 2 others, 18 Feb 2026, In: Advanced electronic materials. 12, 4, e00644Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Exfoliated-MoS₂ Gradual Resistive Switching Devices as Artificial SynapsesFejzaj, D., Schroedter, R., Mikolajick, T. & Heinzig, A., 15 Feb 2026, In: Advanced electronic materials. 11 p., e00691Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Nitride Ferroelectric Domain Wall Memory for Next-Generation ComputingSchönweger, G., Dasenbrook, D., Kyoushi, N., Guido, R., Petraru, A., Mikolajick, T., Schröder, U. & 2 others, 4 Feb 2026, In: Advanced electronic materials. 12, 3, e00616Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Ultra-Low Voltage Reconfigurable FETs in 22nm FDSOI Technology Enabling Dynamic Circuit Obfuscation for Embedded SecurityHe, Y., Holemadlu, A., Bhattacharjee, N., Galderisi, G., Sessi, V., Martinez, J., Wijvliet, M. & 12 others, 15 Jan 2026, In: IEEE journal of the Electron Devices Society. 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Achieving a Dielectric Constant of 60 in Zr_xHf_1-xO₂: A Candidate for DRAM?Vishnumurthy, P., Ganser, R., Kersch, A., Mikolajick, T., Schroeder, U., Kim, D. G., Jung, C. H. & 1 others, 2026, 2026 IEEE International Memory Workshop, IMW 2026 - Proceedings. Institute of Electrical and Electronics Engineers (IEEE), 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• A Low-Power 2-bit Full Adder realized with Three-Independent-Gate Reconfigurable FETsGalderisi, G., He, Y., Martinez, J. P., Bhattacharjee, N., Syamal, B., Havel, V., Sessi, V. & 2 others, 2026, ISCAS 2026 - 2026 IEEE International Symposium on Circuits and Systems. Institute of Electrical and Electronics Engineers (IEEE), p. 2788-2792, 5 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Impact of ALD Oxidant and Deposition Temperature on Electrical Characteristics of Al₂O₃/SiO₂/SiC MOS-CapacitorsManchineni, H. V., Wachowiak, A. & Mikolajick, T., 2026, Interface, Dielectrics and Ohmic Contact in SiC Power Devices. Trans Tech Publications Ltd, p. 21-28, 8 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
• Three-Independent-Gate Reconfigurable Transistors in 22 nm FDSOI for in-Sensor Time-Domain Mixed-Signal ProcessingMartinez, J. P., He, Y., Galderisi, G., Grasso, R., Li, M. J. H., Qian, J., Cantatore, E. & 3 others, 2026, ISCAS 2026 - 2026 IEEE International Symposium on Circuits and Systems. Institute of Electrical and Electronics Engineers (IEEE), p. 3007-3011, 5 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution