Publications

2026

• Ultra-Low Voltage Reconfigurable FETs in 22nm FDSOI Technology Enabling Dynamic Circuit Obfuscation for Embedded SecurityHe, Y., Holemadlu, A., Bhattacharjee, N., Galderisi, G., Sessi, V., Martinez, J., Wijvliet, M. & 12 others, 15 Jan 2026, In: IEEE journal of the Electron Devices Society. 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article

2025

• Design and Evaluation of an RFET Standard Cell Library Compatible with 22 nm FDSOIKavand, N., Darjani, A., Bhattacharjee, N., Quijada, J. N., Martinez, J. P., Mikolajick, T., Trommer, J. & 1 others, 31 Dec 2025, In: IEEE transactions on computer-aided design of integrated circuits and systemsElectronic (full-text) versionResearch output: Contribution to journal > Research article
• Impact of Bias temperature instability on reconfigurable field effect transistors and circuitsGalderisi, G., Mikolajick, T. & Trommer, J., 15 Nov 2025, In: Microelectronic Engineering. 300, 9 p., 112374Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Controlling the Wake-Up Mechanism and Switching Kinetics of Ferroelectric Hf _xZr_{1 –  x}O₂through Hf Content ModulationSunil, A., Alcala, R., Silva, C., Mikolajick, T. & Lancaster, S., 12 Nov 2025, In: ACS Applied Materials and Interfaces. 17, 45, p. 62708-62719, 12 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Process Integration of U-Shape Ambipolar Schottky–Barrier Field-Effect TransistorsCakirlar, C., Neckel Wesling, B., Moustakas, K., Galderisi, G., Pelloquin, S., Baumgartner, O., Thesberg, M. & 3 others, 4 Nov 2025, In: Advanced electronic materials. 11, 18, e00310Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf_0.5Zr_0.5O₂ ferroelectric capacitors probed by hard x-ray photoelectron spectroscopyHamouda, W., Yamashita, Y., Ueda, S., Matzen, S., Renault, O., Mehmood, F., Mikolajick, T. & 2 others, 3 Nov 2025, In: Applied physics letters. 127, 18, 182902Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Peak Splitting and Bias Fields in Ferroelectric Hafnia Mediated by Interface Charge EffectsEngl, M., Hamouda, W., Häusler, I., Lancaster, S., Carpentieri, L., Mikolajick, T., Dubourdieu, C. & 1 others, 10 Sep 2025, In: ACS Applied Materials and Interfaces. 17, 36, p. 51468-51475, 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Emerging applications: Neuromorphic computing and reservoir computingToprasertpong, K., Mikolajick, T., Datta, S., Huang, Q. & Takagi, S., Sep 2025, In: MRS bulletin. 50, 9, p. 1032–1042, 11 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Kinetic Monte Carlo simulation reveals defect charge accumulation favoring ferroelectric phase formation in Hf_1−xZr_xO₂ thin filmsAzevedo Antunes, L., Obernberger, S., Schwermer, P., Hintz, J., Ganser, R., Schroeder, U., Mikolajick, T. & 1 others, 14 Jun 2025, In: Journal of applied physics. 137, 22, 224102Electronic (full-text) versionResearch output: Contribution to journal > Research article
• A Vertical Memristive MoS₂-exfoliated Device for Applications in Artificial SynapsesFejzaj, D., Schroedter, R., Mikolajick, T. & Heinzig, A., 13 Jun 2025, 2025 14th International Conference on Modern Circuits and Systems Technologies (MOCAST). Institute of Electrical and Electronics Engineers (IEEE), 4 p., 11083941Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution