Publications

2022

• Emerging reconfigurable electronic devices based on two-dimensional materials: A reviewFei, W., Trommer, J., Lemme, M. C., Mikolajick, T. & Heinzig, A., Oct 2022, In: InfoMat. 4, 10, e12355Electronic (full-text) versionResearch output: Contribution to journal > Review article
• Electron mobility in strained nanowires probed by THz spectroscopyBalaghi, L., Shan, S., Fotev, I., Rana, R., Moebus, F., Venanzi, T., Hubner, R. & 5 others, 26 Sep 2022, 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz). Institute of Electrical and Electronics Engineers (IEEE), 2 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin FilmsHsain, H. A., Lee, Y., Lancaster, S., Materano, M., Alcala, R., Xu, B., Mikolajick, T. & 3 others, 21 Sep 2022, In: ACS applied materials & interfaces. 14, 37, p. 42232-42244, 13 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Wavelength-dependent conductivity of photo-generated 2DEGs in ultra-pure GaN/AlGaN heterostructuresChen, H. T., Solovyev, V. V., Kukushkin, I. V., Großer, A., Mikolajick, T. & Schmult, S., 15 Sep 2022, In: Journal of crystal growth. 594, 3 p., 126788Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO₂Lomenzo, P. D., Li, S., Pintilie, L., Istrate, C. M., Mikolajick, T. & Schroeder, U., Sep 2022, In: IEEE electron device letters. 43, 9, p. 1447 - 1450, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Temperature‐Dependent Phase Transitions in Hf x Zr 1‐x O 2 Mixed Oxides: Indications of a Proper Ferroelectric MaterialSchroeder, U., Mittmann, T., Materano, M., Lomenzo, P. D., Edgington, P., Lee, Y. H., Alotaibi, M. & 4 others, Sep 2022, In: Advanced electronic materials. 8, 9, 9 p., 2200265Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Novel Graphene Adjustable-Barrier Transistor with Ultra-High Current GainStrobel, C., Chavarin, C. A., Richter, K., Knaut, M., Reif, J., Völkel, S., Jahn, A. & 5 others, 22 Aug 2022, In: ACS Applied Materials and Interfaces. 14, 34, p. 39249-39254, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Investigating charge trapping in ferroelectric thin films through transient measurementsLancaster, S., Lomenzo, P. D., Engl, M., Xu, B., Mikolajick, T., Schroeder, U. & Slesazeck, S., 17 Aug 2022, In:  Frontiers in nanotechnology. 4, 939822Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistorWesling, B. N., Deng, M., Mukherjee, C., de Matos, M., Kumar, A., Larrieu, G., Trommer, J. & 2 others, Aug 2022, In: Solid-state electronics. 194, 108359Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Publisher Correction: The fundamentals and applications of ferroelectric HfO₂ (Nature Reviews Materials, (2022), 7, 8, (653-669), 10.1038/s41578-022-00431-2)Schroeder, U., Park, M. H., Mikolajick, T. & Hwang, C. S., Aug 2022, In: Nature reviews Materials. Vol. 7. p. 670-670, 1 p.Electronic (full-text) versionResearch output: Contribution to specialist publication > Corrections (errata and retractions)