Publications

2022

• Ferroelectric-based synapses and neurons for neuromorphic computingCovi, E., Mulaosmanovic, H., Max, B., Slesazeck, S. & Mikolajick, T., 1 Mar 2022, In:  Neuromorphic computing and engineering. 2, 1, 14 p., 012002Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Plasmonic 3D Self-Folding Architectures via Vacuum MicroformingYu, Y., Lorenz, P., Strobel, C., Zajadacz, J., Albert, M., Zimmer, K. & Kirchner, R., 17 Feb 2022, In: Small. 18, 7, 2105843Electronic (full-text) versionResearch output: Contribution to journal > Research article
• From Doping to Dilution: Local Chemistry and Collective Interactions of La in HfO 2Szyjka, T., Baumgarten, L., Rehm, O., Richter, C., Matveyev, Y., Schlueter, C., Mikolajick, T. & 2 others, 3 Feb 2022, In: Physica status solidi / Rapid research letters. 16, 10, 2100582Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Bioadhesion on Textured Interfaces in the Human Oral Cavity—An In Situ StudyHelbig, R., Hannig, M., Basche, S., Ortgies, J., Killge, S., Hannig, C. & Sterzenbach, T., 1 Feb 2022, In: International journal of molecular sciences. 23, 3, 1157Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Erratum: A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films DOI: 10.1063/5.0078106)Lancaster, S., Mikolajick, T. & Slesazeck, S., 24 Jan 2022, In: Applied physics letters. Vol. 120Electronic (full-text) versionResearch output: Contribution to specialist publication > Corrections (errata and retractions)
• Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based DevicesCalzolaro, A., Mikolajick, T. & Wachowiak, A., 21 Jan 2022, In: Materials. 15, 3, 791Electronic (full-text) versionResearch output: Contribution to journal > Review article
• A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin filmsLancaster, S., Mikolajick, T. & Slesazeck, S., 10 Jan 2022, In: Applied physics letters. 120, 2, 022901Electronic (full-text) versionResearch output: Contribution to journal > Research article
• C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET MemoryDahan, M. M., Breyer, E. T., Slesazeck, S., Mikolajick, T. & Kvatinsky, S., 10 Jan 2022, In: IEEE Transactions on Circuits and Systems : a publication of the IEEE Circuits and Systems Society. 1, Regular Papers. 69, 4, p. 1595-1605, 11 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2-Based FilmsMaterano, M., Reinig, P., Kersch, A., Popov, M., Deluca, M., Mikolajick, T., Boettger, U. & 1 others, 8 Jan 2022, In: Physica Status Solidi - Rapid Research Letters. 16, 4, p. 1-7, 7 p., 2100589Electronic (full-text) versionResearch output: Contribution to journal > Research article
• High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-Kb HfO₂: Si-Based 1T-1C FeRAM Arrays: Si-Based 1T-1C FeRAM ArraysFrancois, T., Coignus, J., Makosiej, A., Giraud, B., Carabasse, C., Barbot, J., Martin, S. & 14 others, 1 Jan 2022, In: IEEE transactions on electron devices : ED. 69, 4, p. 2108-2114, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article