Publications
685 Entries
2022
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From Doping to Dilution: Local Chemistry and Collective Interactions of La in HfO 2, 3 Feb 2022, In: Physica status solidi / Rapid research letters. 16, 10, 2100582Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Bioadhesion on Textured Interfaces in the Human Oral Cavity—An In Situ Study, 1 Feb 2022, In: International journal of molecular sciences. 23, 3, 1157Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Erratum: A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films DOI: 10.1063/5.0078106), 24 Jan 2022, In: Applied physics letters. Vol. 120Electronic (full-text) versionResearch output: Contribution to specialist publication > Corrections (errata and retractions)
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Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices, 21 Jan 2022, In: Materials. 15, 3, 791Electronic (full-text) versionResearch output: Contribution to journal > Review article
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A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films, 10 Jan 2022, In: Applied physics letters. 120, 2, 022901Electronic (full-text) versionResearch output: Contribution to journal > Research article
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C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory, 10 Jan 2022, In: IEEE Transactions on Circuits and Systems : a publication of the IEEE Circuits and Systems Society. 1, Regular Papers. 69, 4, p. 1595-1605, 11 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2-Based Films, 8 Jan 2022, In: Physica Status Solidi - Rapid Research Letters. 16, 4, p. 1-7, 7 p., 2100589Electronic (full-text) versionResearch output: Contribution to journal > Research article
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High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-Kb HfO₂: Si-Based 1T-1C FeRAM Arrays: Si-Based 1T-1C FeRAM Arrays, 1 Jan 2022, In: IEEE transactions on electron devices : ED. 69, 4, p. 2108-2114, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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MOx in ferroelectric memories, 1 Jan 2022, Metal Oxides for Non-volatile Memory: Materials, Technology and Applications. Elsevier , p. 245-279, 35 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
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A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron, 2022, 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS). Glasgow: Institute of Electrical and Electronics Engineers (IEEE), p. 1-4Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution