Publications

2022

• Surrogate-Based Modeling Techniques for Mapping Transistor Figures of Merit onto Compact Model ParametersGonzalez, F. A., Chavez-Hurtado, J. L., Lange, A. & Mikolajick, T., 2022, 2022 IEEE International Integrated Reliability Workshop (IIRW). 5 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Tunneling transport in WSe₂-MoS₂ heterojunction transistor enabled by a two-dimensional device architectureChava, P., Watanabe, K., Taniguchi, T., Mikolajick, T., Helm, M. & Erbe, A., 2022, 2022 Device Research Conference, DRC 2022. Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium OxideMikolajick, T., Schroeder, U. & Slesazeck, S., 2022, 2022 Device Research Conference, DRC 2022. Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution

2021

• Controlled Silicidation of Silicon Nanowires Using Flash Lamp AnnealingKhan, M. B., Prucnal, S., Ghosh, S., Deb, D., Hübner, R., Pohl, D., Rebohle, L. & 3 others, 14 Dec 2021, In: Langmuir. 37, 49, p. 14284-14291, 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Ferroelectric field-effect transistors based on HfO2: a reviewMulaosmanovic, H., Breyer, E. T., Dünkel, S., Beyer, S., Mikolajick, T. & Slesazeck, S., 10 Dec 2021, In: Nanotechnology. 32, 50, 502002Electronic (full-text) versionResearch output: Contribution to journal > Review article
• Hole selective nickel oxide as transparent conductive oxideTröger, D., Reif, J., Mikolajick, T. & Grube, M., 7 Dec 2021, In:  Journal of vacuum science & technology : JVST ; A, Vacuum, surfaces, and films. 40, 1, 013409Electronic (full-text) versionResearch output: Contribution to journal > Research article
• 20 Years of reconfigurable field-effect transistors: From concepts to future applicationsMikolajick, T., Galderisi, G., Simon, M., Rai, S., Kumar, A., Heinzig, A., Weber, W. M. & 1 others, Dec 2021, In: Solid-state electronics. 2021, 186, 108036Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write CapabilityKleimaier, D., Mulaosmanovic, H., Dunkel, S., Beyer, S., Soss, S., Slesazeck, S. & Mikolajick, T., Dec 2021, In: IEEE electron device letters. 42, 12, p. 1774-1777, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• The atomic and electronic structure of Hf_0.5Zr_0.5O₂ and Hf_0.5Zr_0.5O₂:La filmsPerevalov, T. V., Prosvirin, I. P., Suprun, E. A., Mehmood, F., Mikolajick, T., Schroeder, U. & Gritsenko, V. A., Dec 2021, In: Journal of Science: Advanced Materials and Devices. 6, 4, p. 595-600, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• 1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under BitlineOkuno, J., Kunihiro, T., Konishi, K., Materano, M., Ali, T., Kuehnel, K., Seidel, K. & 4 others, 19 Nov 2021, In: IEEE journal of the Electron Devices Society. 10, p. 29-34, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article