Publications
669 Entries
2022
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Robust Reconfigurable Field Effect Transistors Process Route Enabling Multi-VTDevices Fabrication for Hardware Security Applications, 2022, 2022 Device Research Conference, DRC 2022. Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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SPICE Compact Model for an Analog Switching Niobium Oxide Memristor, 2022, p. 1-4, 1 p.Electronic (full-text) versionResearch output: Contribution to conferences > Paper
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Surrogate-Based Modeling Techniques for Mapping Transistor Figures of Merit onto Compact Model Parameters, 2022, 2022 IEEE International Integrated Reliability Workshop (IIRW). 5 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Tunneling transport in WSe2-MoS2 heterojunction transistor enabled by a two-dimensional device architecture, 2022, 2022 Device Research Conference, DRC 2022. Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide, 2022, 2022 Device Research Conference, DRC 2022. Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
2021
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Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing, 14 Dec 2021, In: Langmuir. 37, 49, p. 14284-14291, 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Ferroelectric field-effect transistors based on HfO2: a review, 10 Dec 2021, In: Nanotechnology. 32, 50, 502002Electronic (full-text) versionResearch output: Contribution to journal > Review article
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Hole selective nickel oxide as transparent conductive oxide, 7 Dec 2021, In: Journal of vacuum science & technology : JVST ; A, Vacuum, surfaces, and films. 40, 1, 013409Electronic (full-text) versionResearch output: Contribution to journal > Research article
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20 Years of reconfigurable field-effect transistors: From concepts to future applications, Dec 2021, In: Solid-state electronics. 2021, 186, 108036Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability, Dec 2021, In: IEEE electron device letters. 42, 12, p. 1774-1777, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article