Publications
677 Entries
2022
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Germanium Nanowire Reconfigurable Transistor Model for Predictive Technology Evaluation, 2022, In: IEEE transactions on nanotechnology. 21, p. 728-736, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing, 2022, ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings. Institute of Electrical and Electronics Engineers (IEEE), p. 137-140, 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2based ferroelectric capacitors on reliability performance, 2022, 2022 IEEE International Memory Workshop (IMW). Dresden: Institute of Electrical and Electronics Engineers (IEEE), 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Interplay between charge trapping and polarization switching in BEOL-compatible bilayer Ferroelectric Tunnel Junctions, 2022, In: IEEE journal of the Electron Devices Society. 10, p. 593-599, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene, 2022, 2022 IEEE International Symposium on Applications of Ferroelectrics (ISAF). Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors, 2022, In: IEEE journal of the Electron Devices Society. 10, p. 416-423, 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions, 2022, ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference, Proceedings. Editions Frontieres, p. 340-343, 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Pushing Sputtered HfO2-Based Ferroelectrics toward BEOL Compatibility, 2022, 2022 IEEE Nanotechnology Materials and Devices Conference (NMDC). Nanjing: Institute of Electrical and Electronics Engineers (IEEE), p. 21-24, 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O Thickness Scaling, 2022, In: IEEE journal of the Electron Devices Society. 10, p. 778-783, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Robust Reconfigurable Field Effect Transistors Process Route Enabling Multi-VTDevices Fabrication for Hardware Security Applications, 2022, 2022 Device Research Conference, DRC 2022. Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution