Publications

2025

• Back-Bias Effects in a SiGe Nanosheet Transistor with Multiple Independent GatesBeyer, C., Bhattacharjee, N., Mikolajick, T. & Trommer, J., 18 Mar 2025, In: Advanced materials technologies. 10, 6, 2401391Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Multiple-Independent-Gate Reconfigurable FETs Processed on Industrial 300 mm FDSOIBhattacharjee, N., He, Y., Galderisi, G., Havel, V., Slesazeck, S., Sessi, V., Drescher, M. & 11 others, 10 Mar 2025, In: IEEE electron device letters. 46, 5, p. 689-692, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Ferroelectric Al_1-xSc_xN Opposite State Retention Model Based on Switching DynamicsGuido, R., Gremmel, M., Mikolajick, T., Fichtner, S. & Schroeder, U., 6 Mar 2025, In: Advanced functional materials. 35, 31, 2421793Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Interaction Between Strain and Phase Formation in Hf_xZr_1-xO₂ Thin FilmsWunderwald, F., Xu, B., Kersch, A., Holsgrove, K. M., Kao, Y. C., Richter, C., Enghardt, S. & 2 others, 5 Mar 2025, In: Small. 21, 9, 2408133Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Channel Length Dependence of Effective Barrier Height Experienced by Charge Carriers in Schottky-Barrier Transistors Based on Si-Nanowire ArraysJeon, D. Y., Park, S. J., Pregl, S., Trommer, J., Heinzig, A., Mikolajick, T. & Weber, W. M., 4 Mar 2025, In: IEEE journal of the Electron Devices Society. 13, p. 168-172, 5 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Analyzing Carrier Density and Hall Mobility in Impurity-Free Silicon Virtually Doped by External Defect PlacementNagarajan, S., Ratschinski, I., Schmult, S., Wirth, S., König, D., Mikolajick, T., Hiller, D. & 1 others, 12 Feb 2025, In: Advanced functional materials. 35, 7, 2415230Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Bi-Linearity of Back Gated Schottky Barrier Transistors on an Industrial 22nm FDSOI Platform for Efficient In-Hardware Matrix-Vector Multiplication and AdditionMartinez, J. P., Bhattacharjee, N., He, Y., Galderisi, G., O'Connor, I., Mikolajick, T. & Trommer, J., 2025, 2025 23rd IEEE Interregional NEWCAS Conference, NEWCAS 2025. Institute of Electrical and Electronics Engineers (IEEE), p. 470-474, 5 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Circuit Polymorphism Enabled by RFET Devices Processed on Industrial FDSOIBhattacharjee, N., Galderisi, G., He, Y., Sessi, V., Drescher, M., Havel, V., Zier, M. & 15 others, 2025, 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025. Institute of Electrical and Electronics Engineers (IEEE), 3 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Comparative Study of Switching Dynamics in Ferroelectric-based Capacitors with Different Design OptionsDriussi, F., Rocco, E., Massarotto, M., Lancaster, S., Slesazeck, S., Mikolajick, T. & Esseni, D., 2025, ICMTS 2025 - Proceedings of the 2025 IEEE 37th International Conference on Microelectronic Test Structures, ICMTS 2025. Institute of Electrical and Electronics Engineers (IEEE), 5 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Impact of Interfacial SiO₂ Layer Thickness on the Electrical Performance of SiO₂/High-k Stacks on 4H-SiCKrause, S., Mikhaylov, A., Schroeder, U., Mikolajick, T. & Wachowiak, A., 2025, Processes in Devices Fabrication. Trans Tech Publications Ltd, p. 17-25, 9 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report