Publications

2025

• Effect of HZO Thickness Scaling in the Bilayer Ferroelectric Tunnel JunctionCarpentieri, L., Mikolajick, T. & Slesazeck, S., 10 Jun 2025, In: ACS applied electronic materials. 7, 11, p. 5008–5017, 10 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Demonstration of a Graphene Adjustable-Barriers Phototransistor with Tunable Ultra-High ResponsivityStrobel, C., Chavarin, C. A., Knaut, M., Wenger, C., Heinzig, A. & Mikolajick, T., Jun 2025, In: Advanced optical materials. 13, 18, 2500344Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley NeuristorAscoli, A., Demirkol, A. S., Messaris, I., Ntinas, V., Prousalis, D., Slesazeck, S., Mikolajick, T. & 6 others, Jun 2025, In: Advanced electronic materials. 11, 8, 54 p., 2400789Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Reconfigurable Ge Transistors Enabling Adaptive Differential AmplifiersFuchsberger, A., Dobler, A., Wind, L., Kramer, A., Kulenkampff, J., Reuter, M., Nazzari, D. & 9 others, Jun 2025, In: IEEE Transactions on Electron Devices. 72, 6, p. 2868-2873, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Edge of Chaos Induces a Hopf Bifurcation in a Bio-Inspired Thermally-Activated Memristor OscillatorAscoli, A., Gemo, E., Rossetti, D., Corinto, F., Bonnin, M., Gilli, M., Civalleri, P. & 10 others, 28 May 2025, 2025 IEEE International Symposium on Circuits and Systems (ISCAS). Institute of Electrical and Electronics Engineers (IEEE), p. 1-5, 5 p., 11043813Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• ZrO₂ Based Multilayered Stacks with Al₂O₃, Y₂O₃ or La₂O₃ Interlayers for SiC Power DevicesKrause, S., Mikhaylov, A., Schroeder, U., Mikolajick, T. & Wachowiak, A., 14 May 2025, In: ACS Applied Materials and Interfaces. 17, 19, p. 28789-28798, 10 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Improved 2D charge carrier quantification workflow for scanning spreading resistance microscopyAdlmaier, T., Doering, S., Binder, B., Simon, D. K., Mikolajick, T. & Eng, L. M., May 2025, In: Microelectronics Reliability. 168, 115646Electronic (full-text) versionResearch output: Contribution to journal > Research article
• High-Performance Silicon Nanowire Reconfigurable Field Effect Transistors Using Flash Lamp AnnealingGhosh, S., Khan, M. B., Prucnal, S., Hübner, R., Chava, P., Mauersberger, T., Mikolajick, T. & 2 others, 25 Mar 2025, In: ACS applied electronic materials. 7, 6, p. 2284-2297, 14 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Back-Bias Effects in a SiGe Nanosheet Transistor with Multiple Independent GatesBeyer, C., Bhattacharjee, N., Mikolajick, T. & Trommer, J., 18 Mar 2025, In: Advanced materials technologies. 10, 6, 2401391Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Multiple-Independent-Gate Reconfigurable FETs Processed on Industrial 300 mm FDSOIBhattacharjee, N., He, Y., Galderisi, G., Havel, V., Slesazeck, S., Sessi, V., Drescher, M. & 11 others, 10 Mar 2025, In: IEEE electron device letters. 46, 5, p. 689-692, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article