Publications

2021

• Binary ferroelectric oxides for future computing paradigmsPark, M. H., Kwon, D., Schroeder, U. & Mikolajick, T., Nov 2021, In: MRS bulletin. 46, 11, p. 1071-1079, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Review article
• Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free readMulaosmanovic, H., Kleimaier, D., Dünkel, S., Beyer, S., Mikolajick, T. & Slesazeck, S., 14 Oct 2021, In: Nanoscale. 13, 38, p. 16258-16266, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Intrinsic Nature of Negative Capacitance in Multidomain Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric/Dielectric HeterostructuresHoffmann, M., Gui, M., Slesazeck, S., Fontanini, R., Segatto, M., Esseni, D. & Mikolajick, T., 5 Oct 2021, In: Advanced functional materials. 32, 2, 2108494Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Enhanced Trion Emission in Monolayer MoSe₂ by Constructing a Type-I Van Der Waals HeterostructureDuan, J., Chava, P., Ghorbani-Asl, M., Erb, D., Hu, L., Krasheninnikov, A. V., Schneider, H. & 6 others, 1 Oct 2021, In: Advanced functional materials. 31, 40, 2104960Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Pyroelectric dependence of atomic layer-deposited Hf0.5Zr0.5O2 on film thickness and annealing temperatureLomenzo, P. D., Alcala, R., Richter, C., Li, S., Mikolajick, T. & Schroeder, U., 13 Sep 2021, In: Applied physics letters. 119, 11, 112903Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Analysis of Energy-Delay-Product of a 3D Vertical Nanowire FET TechnologyO'Connor, I., Poittevin, A., Le Beux, S., Bosio, A., Stanojevic, Z., Baumgartner, O., Mukherjee, C. & 4 others, 1 Sep 2021, 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021. Institute of Electrical and Electronics Engineers (IEEE), p. 1-4Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stacksMauersberger, T., Trommer, J., Sharma, S., Knaut, M., Pohl, D., Rellinghaus, B., Mikolajick, T. & 1 others, 1 Sep 2021, In: Semiconductor science and technology. 36, 9, 6 p., 095025Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Effect of the Si Doping Content in HfO2 Film on the Key Performance Metrics of Ferroelectric FETsMulaosmanovic, H., Dunkel, S., Kleimaier, D., Kacimi, A. E., Beyer, S., Breyer, E. T., Mikolajick, T. & 1 others, Sep 2021, In: IEEE transactions on electron devices : ED. 68, 9, p. 4773-4779, 7 p., 9507084Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic StorageAli, T., Kühnel, K., Olivo, R., Lehninger, D., Müller, F., Lederer, M., Rudolph, M. & 13 others, Sep 2021, In: Electronic Materials. 2, 3, p. 344-369, 26 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• An unexplored antipolar phase in HfO2 from first principles and implication for wake-up mechanismAntunes, L. A., Ganser, R., Alcala, R., Mikolajick, T., Schroeder, U. & Kersch, A., 23 Aug 2021, In: Applied physics letters. 119, 8, 082903Electronic (full-text) versionResearch output: Contribution to journal > Research article