Publications

2022

• Influence of Interfacial Oxide Layers in Hf_0.5Zr_0.5O₂based ferroelectric capacitors on reliability performanceAlcala, R., Mehmood, F., Vishnumurthy, P., Mittmann, T., Mikolajick, T. & Schroeder, U., 2022, 2022 IEEE International Memory Workshop (IMW). Dresden: Institute of Electrical and Electronics Engineers (IEEE), 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Interplay between charge trapping and polarization switching in BEOL-compatible bilayer Ferroelectric Tunnel JunctionsFontanini, R., Barbot, J., Segatto, M., Lancaster, S., Duong, Q., Driussi, F., Grenouillet, L. & 5 others, 2022, In: IEEE journal of the Electron Devices Society. 10, p. 593-599, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown grapheneLancaster, S., Arnay, I., Guerrero, R., Gudin, A., Mikolajick, T., Perna, P. & Slesazeck, S., 2022, 2022 IEEE International Symposium on Applications of Ferroelectrics (ISAF). Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect TransistorsRoemer, C., Darbandy, G., Schwarz, M., Trommer, J., Heinzig, A., Mikolajick, T., Weber, W. M. & 2 others, 2022, In: IEEE journal of the Electron Devices Society. 10, p. 416-423, 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel JunctionsSegatto, M., Massarotto, M., Lancaster, S., Duong, Q. T., Affanni, A., Fontanini, R., Driussi, F. & 4 others, 2022, ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference, Proceedings. Editions Frontieres, p. 340-343, 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Pushing Sputtered HfO₂-Based Ferroelectrics toward BEOL CompatibilityWang, X., Mikolajick, T. & Grube, M., 2022, 2022 IEEE Nanotechnology Materials and Devices Conference (NMDC). Nanjing: Institute of Electrical and Electronics Engineers (IEEE), p. 21-24, 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Reliability Study of 1T1C FeRAM Arrays With Hf_0.5Zr_0.5O Thickness ScalingOkuno, J., Kunihiro, T., Konishi, K., Shuto, Y., Sugaya, F., Materano, M., Ali, T. & 7 others, 2022, In: IEEE journal of the Electron Devices Society. 10, p. 778-783, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Robust Reconfigurable Field Effect Transistors Process Route Enabling Multi-V_TDevices Fabrication for Hardware Security ApplicationsGalderisi, G., Mikolajick, T. & Trommer, J., 2022, 2022 Device Research Conference, DRC 2022. Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• SPICE Compact Model for an Analog Switching Niobium Oxide MemristorSchroedter, R., Demirkol, A. S., Ascoli, A., Tetzlaff, R., Mgeladze, E., Herzig, M., Slesazeck, S. & 1 others, 2022, p. 1-4, 1 p.Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Surrogate-Based Modeling Techniques for Mapping Transistor Figures of Merit onto Compact Model ParametersGonzalez, F. A., Chavez-Hurtado, J. L., Lange, A. & Mikolajick, T., 2022, 2022 IEEE International Integrated Reliability Workshop (IIRW). 5 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution