Publications
669 Entries
2021
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Electronic Contributions to Ferroelectricity and Field-Induced Phase Transitions in Doped-HfO2, 16 May 2021, 2021 IEEE International Symposium on Applications of Ferroelectrics (ISAF). Institute of Electrical and Electronics Engineers (IEEE), 9477323Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Special topic on ferroelectricity in hafnium oxide: Materials and devices, 3 May 2021, In: Applied physics letters. 118, 18, 180402Electronic (full-text) versionResearch output: Contribution to journal > Editorial (Lead article)
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Chemical Stability of IrO2 Top Electrodes in Ferroelectric Hf0.5Zr0.5O2 ‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas, May 2021, In: Physica status solidi / Rapid research letters. 15, 5, 2100027Electronic (full-text) versionResearch output: Contribution to journal > Research article
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High-endurance and low-voltage operation of 1T1C FeRAM arrays for nonvolatile memory application, May 2021, 2021 IEEE International Memory Workshop (IMW). Dresden: Institute of Electrical and Electronics Engineers (IEEE), 9439595Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf 0.5 Zr 0.5 O 2 Films, May 2021, In: Physica status solidi / Rapid research letters. 15, 5, 2100012Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Improved Vertex Coloring With NbOₓ Memristor-Based Oscillatory Networks, May 2021, In: IEEE Transactions on Circuits and Systems : a publication of the IEEE Circuits and Systems Society. 1, Regular Papers. 68, 5, p. 2082-2095, 14 p., 9371291Electronic (full-text) versionResearch output: Contribution to journal > Research article
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On Local Activity and Edge of Chaos in a NaMLab Memristor, 20 Apr 2021, In: Frontiers in Neuroscience. 15, 651452Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors, 19 Apr 2021, LAEDC 2021 - IEEE Latin America Electron Devices Conference. Institute of Electrical and Electronics Engineers (IEEE), 9437954Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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The Case for Ferroelectrics in Future Memory Devices, 8 Apr 2021, 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Institute of Electrical and Electronics Engineers (IEEE), 9420821Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Reconfigurable thin-film transistors based on a parallel array of Si-nanowires, 28 Mar 2021, In: Journal of applied physics. 129, 12, 124504 Electronic (full-text) versionResearch output: Contribution to journal > Research article