Publications
668 Entries
2021
-
16kbit HfO2:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility, 2021, 2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers (IEEE), p. 33.1.1-33.1.4Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
-
Back-bias reconfigurable field effect transistor: A flexible add-on functionality for 22 nm FDSOI, 2021, 2021 Silicon Nanoelectronics Workshop, SNW 2021. Institute of Electrical and Electronics Engineers (IEEE), 2 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
-
Control Strategies to Optimize Graph Coloring via M-CNNs with Locally-Active NbOx Memristors, 2021Research output: Contribution to conferences > Paper
-
Demonstration of 1T1C FeRAM Arrays for Nonvolatile Memory Applications, 2021, 2021 20th International Workshop on Junction Technology (IWJT). Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
-
FeFET based Logic-in-Memory: an overview, 2021, Proceedings - 2021 16th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS 2021. Institute of Electrical and Electronics Engineers (IEEE), 6 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
-
Ferroelectric Tunneling Junctions for Edge Computing, 2021, 2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Proceedings. Institute of Electrical and Electronics Engineers (IEEE), 9401800Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
-
Integration and Reliability Aspects of Low-Temperature and Au-free Ta/Al-based Ohmic Contacts for AlGaN/GaN MIS-HEMTs, 2021, ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC). p. 307-310, 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
-
Mechanism of Retention Degradation after Endurance Cycling of HfO2-based Ferroelectric Transistors, 2021, 2021 Symposium on VLSI Technology. Kyoto: Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
-
Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence, 2021, 2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
-
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions, 2021, ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference, Proceedings. Editions Frontieres, p. 255-258, 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution