Publications

2021

• RF small-signal modeling of HCI degradation in FDSOI NMOSFET using BSIM-IMGGonzalez, F. A. V., Lange, A., Chohan, T. & Mikolajick, T., 2021, 2021 IEEE International Integrated Reliability Workshop (IIRW). p. 33-37, 5 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• What Influences Surface Plasmon Resonance Linewidth in MIM Structures Obtained by Colloidal Self-AssemblyYu, Y., Schletz, D., Reif, J., Winkler, F., Albert, M., Fery, A. & Kirchner, R., 2021, In: International Conference on Metamaterials, Photonic Crystals and Plasmonics. p. 1051-1052, 2 p.Research output: Contribution to journal > Conference article

2020

• Polarization switching in thin doped HfO2 ferroelectric layersMaterano, M., Lomenzo, P. D., Mulaosmanovic, H., Hoffmann, M., Toriumi, A., Mikolajick, T. & Schroeder, U., 28 Dec 2020, In: Applied physics letters. 117, 26, 262904Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Hafnia-Based Double-Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic ComputingMax, B., Hoffmann, M., Mulaosmanovic, H., Slesazeck, S. & Mikolajick, T., 22 Dec 2020, In: ACS applied electronic materials. 2, 12, p. 4023-4033Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Influences on Plasmon Resonance Linewidth in Metal-Insulator-Metal Structures Obtained via Colloidal Self-AssemblyYu, Y., Schletz, D., Reif, J., Winkler, F., Albert, M., Fery, A. & Kirchner, R., 16 Dec 2020, In: ACS Applied Materials and Interfaces. 12, 50, p. 56281-56289, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Application and benefits of target programming algorithms for ferroelectric HfO₂transistorsZhou, H., Ocker, J., Padovani, A., Pesic, M., Trentzsch, M., Dunkel, S., Mulaosmanovic, H. & 5 others, 12 Dec 2020, p. 18.6.1-18.6.4Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Impact of oxygen vacancy content in ferroelectric HZO films on the device performanceMittmann, T., Materano, M., Chang, S. C., Karpov, I., Mikolajick, T. & Schroeder, U., 12 Dec 2020, p. 18.4.1-18.4.4Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching BehaviorMulaosmanovic, H., Dunkel, S., Trentzsch, M., Beyer, S., Breyer, E. T., Mikolajick, T. & Slesazeck, S., Dec 2020, In: IEEE transactions on electron devices : ED. 67, 12, p. 5804-5809, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Influence of oxygen content on the structure and reliability of ferroelectric Hf_xZr_1−xO₂ layersMaterano, M., Mittmann, T., Lomenzo, P. D., Zhou, C., Jones, J. L., Falkowski, M., Kersch, A. & 2 others, 24 Nov 2020, In: ACS applied electronic materials. 2, 11, p. 3618-3626, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Wake-Up Mechanisms in Ferroelectric Lanthanum-Doped Hf_0.5Zr_0.5O₂ Thin FilmsMehmood, F., Mikolajick, T. & Schroeder, U., Nov 2020, In: Physica Status Solidi (A) Applications and Materials Science. 217, 22, 2000281Electronic (full-text) versionResearch output: Contribution to journal > Research article