Publications
685 Entries
2021
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Back-bias reconfigurable field effect transistor: A flexible add-on functionality for 22 nm FDSOI, 2021, 2021 Silicon Nanoelectronics Workshop, SNW 2021. Institute of Electrical and Electronics Engineers (IEEE), 2 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Control Strategies to Optimize Graph Coloring via M-CNNs with Locally-Active NbOx Memristors, 2021Research output: Contribution to conferences > Paper
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Demonstration of 1T1C FeRAM Arrays for Nonvolatile Memory Applications, 2021, 2021 20th International Workshop on Junction Technology (IWJT). Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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FeFET based Logic-in-Memory: an overview, 2021, Proceedings - 2021 16th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS 2021. Institute of Electrical and Electronics Engineers (IEEE), 6 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Ferroelectric Tunneling Junctions for Edge Computing, 2021, 2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Proceedings. Institute of Electrical and Electronics Engineers (IEEE), 9401800Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Integration and Reliability Aspects of Low-Temperature and Au-free Ta/Al-based Ohmic Contacts for AlGaN/GaN MIS-HEMTs, 2021, ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC). p. 307-310, 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Mechanism of Retention Degradation after Endurance Cycling of HfO2-based Ferroelectric Transistors, 2021, 2021 Symposium on VLSI Technology. Kyoto: Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions, 2021, ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference, Proceedings. Editions Frontieres, p. 255-258, 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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RF small-signal modeling of HCI degradation in FDSOI NMOSFET using BSIM-IMG, 2021, 2021 IEEE International Integrated Reliability Workshop (IIRW). p. 33-37, 5 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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What Influences Surface Plasmon Resonance Linewidth in MIM Structures Obtained by Colloidal Self-Assembly, 2021, In: International Conference on Metamaterials, Photonic Crystals and Plasmonics. p. 1051-1052, 2 p.Research output: Contribution to journal > Conference article