Publications

2020

• Influence of oxygen content on the structure and reliability of ferroelectric Hf_xZr_1−xO₂ layersMaterano, M., Mittmann, T., Lomenzo, P. D., Zhou, C., Jones, J. L., Falkowski, M., Kersch, A. & 2 others, 24 Nov 2020, In: ACS applied electronic materials. 2, 11, p. 3618-3626, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Wake-Up Mechanisms in Ferroelectric Lanthanum-Doped Hf_0.5Zr_0.5O₂ Thin FilmsMehmood, F., Mikolajick, T. & Schroeder, U., Nov 2020, In: Physica Status Solidi (A) Applications and Materials Science. 217, 22, 2000281Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Enhanced ferroelectric polarization in TiN/HfO₂/TiN capacitors by interface designMüller, M., Szyjka, T., Baumgarten, L., Mittmann, T., Matveyev, Y., Schlueter, C., Mikolajick, T. & 1 others, 27 Oct 2020, In: ACS applied electronic materials. 2, 10, p. 3152-3159, 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1−xZrxO2-based structuresStolichnov, I., Cavalieri, M., Gastaldi, C., Hoffmann, M., Schroeder, U., Mikolajick, T. & Ionescu, A. M., 26 Oct 2020, In: Applied physics letters. 117, 172902Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Built-in bias fields for retention stabilisation in hafnia-based ferroelectric tunnel junctionsMax, B., Hoffmann, M., Slesazeck, S. & Mikolajick, T., 15 Oct 2020, In:  Electronics letters : the latest research in electronic engineering and technology. 56, 21, p. 1108-1110Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Investigation of HVPE grown layers on MOVPE GaN/sapphire templates for application as drift layer in vertical GaN power devicesXie, T., Krupinski, M., Jachalke, S., Silva, C., Großer, A., Gärtner, J., Hentschel, R. & 2 others, 11 Oct 2020, ASDAM 2020 - Proceedings: 13th International Conference on Advanced Semiconductor Devices and Microsystems. Izsak, T. & Vanko, G. (eds.). Institute of Electrical and Electronics Engineers (IEEE), p. 135-138, 4 p., 9393849Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Frequency Mixing with HfO₂-Based Ferroelectric TransistorsMulaosmanovic, H., Dünkel, S., Trentzsch, M., Beyer, S., Breyer, E. T., Mikolajick, T. & Slesazeck, S., 7 Oct 2020, In: ACS Applied Materials and Interfaces. 12, 40, p. 44919-44925, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• A Gibbs energy view of double hysteresis in ZrO2 and Si-doped HfO2Lomenzo, P. D., Materano, M., Richter, C., Alcala, R., Mikolajick, T. & Schroeder, U., 5 Oct 2020, In: Applied physics letters. 117, 14, 142904Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si NanowirePark, S. J., Jeon, D. Y., Sessi, V., Trommer, J., Heinzig, A., Mikolajick, T., Kim, G. T. & 1 others, 30 Sep 2020, In: ACS Applied Materials and Interfaces. 12, 39, p. 43927-43932, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Al₂O₃-TiO_x as full area passivating contacts for silicon surfaces utilizing oxygen scavenging titanium interlayersTröger, D., Grube, M., Lehnert, J. & Mikolajick, T., 15 Sep 2020, In: Solar energy materials and solar cells. 215, 110651Electronic (full-text) versionResearch output: Contribution to journal > Research article