Publications

2020

• Built-in bias fields for retention stabilisation in hafnia-based ferroelectric tunnel junctionsMax, B., Hoffmann, M., Slesazeck, S. & Mikolajick, T., 15 Oct 2020, In:  Electronics letters : the latest research in electronic engineering and technology. 56, 21, p. 1108-1110Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Investigation of HVPE grown layers on MOVPE GaN/sapphire templates for application as drift layer in vertical GaN power devicesXie, T., Krupinski, M., Jachalke, S., Silva, C., Großer, A., Gärtner, J., Hentschel, R. & 2 others, 11 Oct 2020, ASDAM 2020 - Proceedings: 13th International Conference on Advanced Semiconductor Devices and Microsystems. Izsak, T. & Vanko, G. (eds.). Institute of Electrical and Electronics Engineers (IEEE), p. 135-138, 4 p., 9393849Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Frequency Mixing with HfO₂-Based Ferroelectric TransistorsMulaosmanovic, H., Dünkel, S., Trentzsch, M., Beyer, S., Breyer, E. T., Mikolajick, T. & Slesazeck, S., 7 Oct 2020, In: ACS Applied Materials and Interfaces. 12, 40, p. 44919-44925, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• A Gibbs energy view of double hysteresis in ZrO2 and Si-doped HfO2Lomenzo, P. D., Materano, M., Richter, C., Alcala, R., Mikolajick, T. & Schroeder, U., 5 Oct 2020, In: Applied physics letters. 117, 14, 142904Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si NanowirePark, S. J., Jeon, D. Y., Sessi, V., Trommer, J., Heinzig, A., Mikolajick, T., Kim, G. T. & 1 others, 30 Sep 2020, In: ACS Applied Materials and Interfaces. 12, 39, p. 43927-43932, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Al₂O₃-TiO_x as full area passivating contacts for silicon surfaces utilizing oxygen scavenging titanium interlayersTröger, D., Grube, M., Lehnert, J. & Mikolajick, T., 15 Sep 2020, In: Solar energy materials and solar cells. 215, 110651Electronic (full-text) versionResearch output: Contribution to journal > Research article
• What’s next for negative capacitance electronics?Hoffmann, M., Slesazeck, S., Schroeder, U. & Mikolajick, T., 9 Sep 2020, In: Nature electronics. 3, p. 504–506Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETsMulaosmanovic, H., Dunkel, S., Muller, J., Trentzsch, M., Beyer, S., Breyer, E. T., Mikolajick, T. & 1 others, Sep 2020, In: IEEE electron device letters. 41, 9, p. 1420-1423, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Lanthanum doping induced structural changes and their implications on ferroelectric properties of Hf1−xZrxO2 thin filmMehmood, F., Mikolajick, T. & Schroeder, U., 31 Aug 2020, In: Applied physics letters. 117, 9, 092902Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Formation and crystallographic orientation of NiSi₂-Si interfacesFuchs, F., Bilal Khan, M., Deb, D., Pohl, D., Schuster, J., Weber, W. M., Mühle, U. & 4 others, 28 Aug 2020, In: Journal of applied physics. 128, 8, 085301Electronic (full-text) versionResearch output: Contribution to journal > Research article