Publications

2020

• What’s next for negative capacitance electronics?Hoffmann, M., Slesazeck, S., Schroeder, U. & Mikolajick, T., 9 Sep 2020, In: Nature electronics. 3, p. 504–506Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETsMulaosmanovic, H., Dunkel, S., Muller, J., Trentzsch, M., Beyer, S., Breyer, E. T., Mikolajick, T. & 1 others, Sep 2020, In: IEEE electron device letters. 41, 9, p. 1420-1423, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Lanthanum doping induced structural changes and their implications on ferroelectric properties of Hf1−xZrxO2 thin filmMehmood, F., Mikolajick, T. & Schroeder, U., 31 Aug 2020, In: Applied physics letters. 117, 9, 092902Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Formation and crystallographic orientation of NiSi₂-Si interfacesFuchs, F., Bilal Khan, M., Deb, D., Pohl, D., Schuster, J., Weber, W. M., Mühle, U. & 4 others, 28 Aug 2020, In: Journal of applied physics. 128, 8, 085301Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Involvement of Unsaturated Switching in the Endurance Cycling of Si-doped HfO₂ Ferroelectric Thin FilmsLi, S., Zhou, D., Shi, Z., Hoffmann, M., Mikolajick, T. & Schroeder, U., 1 Aug 2020, In: Advanced electronic materials. 6, 8, 2000264Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Memory technology—a primer for material scientistsSchenk, T., Pešić, M., Slesazeck, S., Schroeder, U. & Mikolajick, T., 1 Aug 2020, In: Reports on progress in physics. 83, 8, 086501Electronic (full-text) versionResearch output: Contribution to journal > Research article
• HfO₂-based ferroelectric FETs: Performance of single devices and mini-arraysMulaosmanovic, H., Muller, F., Breyer, E. T., Dunkel, S., Trentzsch, M., Beyer, S., Mikolajick, T. & 1 others, Aug 2020, p. 146-147, 2 p.Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Interplay between Switching and Retention in HfO 2 -Based Ferroelectric FETsMulaosmanovic, H., Muller, F., Lederer, M., Ali, T., Hoffmann, R., Seidel, K., Zhou, H. & 10 others, Aug 2020, In: IEEE transactions on electron devices : ED. 67, 8, p. 3466-3471, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Universal Curie constant and pyroelectricity in doped ferroelectric HfO₂ thin filmsLomenzo, P. D., Jachalke, S., Stoecker, H., Mehner, E., Richter, C., Mikolajick, T. & Schroeder, U., Aug 2020, In: Nano energy. 74, 104733Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Reconfigurable frequency multiplication with a ferroelectric transistorMulaosmanovic, H., Breyer, E. T., Mikolajick, T. & Slesazeck, S., 18 Jul 2020, In: Nature electronics. 3, p. 391–397, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article