Publications

2020

• Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructuresCalzolaro, A., Hentschel, R., Edokam, I. F., Sizov, V., Mikolajick, T. & Wachowiak, A., Jul 2020, In: Semiconductor science and technology. 35, 7, 075011Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Quantum and transport lifetimes in optically induced GaN/AlGaN 2DEGs grown on bulk GaNKrückeberg, L., Wirth, S., Solovyev, V. V., Großer, A., Kukushkin, I. V., Mikolajick, T. & Schmult, S., Jul 2020, In:  Journal of vacuum science & technology : JVST ; B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena. 38, 4, 042203Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-StatesSimon, M., Liang, B., Fischer, D., Knaut, M., Tahn, A., Mikolajick, T. & Weber, W. M., Jul 2020, In: IEEE electron device letters. 41, 7, p. 1110 - 1113, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Depolarization as Driving Force in Antiferroelectric Hafnia and Ferroelectric Wake-UpLomenzo, P. D., Richter, C., Mikolajick, T. & Schroeder, U., 23 Jun 2020, In: ACS applied electronic materials. 2, 6, p. 1583-1595, 13 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Hafnium oxide as an enabler for competitive ferroelectric devicesMikolajick, T., Mulaosmanovic, H., Lomenzo, P., Hoffmann, M., Slesazeck, S. & Schroeder, U., Jun 2020, p. 1-2, 2 p.Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Nanosecond Laser Anneal (NLA) for Si-implanted HfO2 Ferroelectric Memories Integrated in Back-End of Line (BEOL)Grenouillet, L., Francois, T., Coignus, J., Kerdiles, S., Vaxelaire, N., Carabasse, C., Mehmood, F. & 12 others, Jun 2020, 2020 IEEE Symposium on VLSI Technology. Honolulu: Institute of Electrical and Electronics Engineers (IEEE), 9265061Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Size effect of electronic properties in highly arsenic-doped silicon nanowiresMauersberger, T., Ibrahim, I., Grube, M., Heinzig, A., Mikolajick, T. & Weber, W. M., Jun 2020, In: Solid-state electronics. 168, 107724Electronic (full-text) versionResearch output: Contribution to journal > Research article
• SoC compatible 1 T1 C FeRAM memory array based on ferroelectric Hf0.5Zr0.5O2Okuno, J., Kunihiro, T., Konishi, K., Maemura, H., Shute, Y., Sugaya, F., Materano, M. & 7 others, Jun 2020, 2020 IEEE Symposium on VLSI Technology. Honolulu: Institute of Electrical and Electronics Engineers (IEEE), 9265063Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Towards scalable reconfigurable field effect transistor using flash lamp annealingKhan, M. B., Ghosh, S., Prucnal, S., Mauersberger, T., Hubner, R., Simon, M., Mikolajick, T. & 2 others, Jun 2020Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Endurance and targeted programming behavior of HfO2-FeFETsZhou, H., Mennenga, J. O. M., Müller, M. N. S., Müller, M. N. S., Trentzsch, M., Trentzsch, M., Beyer, S. D. S. & 1 others, May 2020, 2020 IEEE International Memory Workshop (IMW). Dresden: Institute of Electrical and Electronics Engineers (IEEE), 9108131Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution