Publications
675 Entries
2020
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Involvement of Unsaturated Switching in the Endurance Cycling of Si-doped HfO2 Ferroelectric Thin Films, 1 Aug 2020, In: Advanced electronic materials. 6, 8, 2000264Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Memory technology—a primer for material scientists, 1 Aug 2020, In: Reports on progress in physics. 83, 8, 086501Electronic (full-text) versionResearch output: Contribution to journal > Research article
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HfO2-based ferroelectric FETs: Performance of single devices and mini-arrays, Aug 2020, p. 146-147, 2 p.Electronic (full-text) versionResearch output: Contribution to conferences > Paper
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Interplay between Switching and Retention in HfO 2 -Based Ferroelectric FETs, Aug 2020, In: IEEE transactions on electron devices : ED. 67, 8, p. 3466-3471, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Universal Curie constant and pyroelectricity in doped ferroelectric HfO2 thin films, Aug 2020, In: Nano energy. 74, 104733Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Reconfigurable frequency multiplication with a ferroelectric transistor, 18 Jul 2020, In: Nature electronics. 3, p. 391–397, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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AFE-like Hysteresis Loops from Doped HfO2: Field Induced Phase Changes and Depolarization Fields, Jul 2020, IFCS-ISAF 2020 - Joint Conference of the IEEE International Frequency Control Symposium and IEEE International Symposium on Applications of Ferroelectrics, Proceedings. Institute of Electrical and Electronics Engineers (IEEE), 9234872Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Experimental Ferroelectric Energy Landscapes: Insights into the Origin of Negative Capacitance, Jul 2020, IFCS-ISAF 2020 - Joint Conference of the IEEE International Frequency Control Symposium and IEEE International Symposium on Applications of Ferroelectrics, Proceedings. Institute of Electrical and Electronics Engineers (IEEE), 9234897Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures, Jul 2020, In: Semiconductor science and technology. 35, 7, 075011Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Quantum and transport lifetimes in optically induced GaN/AlGaN 2DEGs grown on bulk GaN, Jul 2020, In: Journal of vacuum science & technology : JVST ; B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena. 38, 4, 042203Electronic (full-text) versionResearch output: Contribution to journal > Research article