Publications

2020

• Endurance and targeted programming behavior of HfO2-FeFETsZhou, H., Mennenga, J. O. M., Müller, M. N. S., Müller, M. N. S., Trentzsch, M., Trentzsch, M., Beyer, S. D. S. & 1 others, May 2020, 2020 IEEE International Memory Workshop (IMW). Dresden: Institute of Electrical and Electronics Engineers (IEEE), 9108131Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• FeFET: A versatile CMOS compatible device with game-changing potentialBeyer, S., Dünkel, S., Trentzsch, M., Müller, J., Hellmich, A., Utess, D., Paul, J. & 23 others, May 2020, 2020 IEEE International Memory Workshop (IMW). Dresden: Institute of Electrical and Electronics Engineers (IEEE), 9108150Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Thickness Scaling of AFE-RAM ZrO2 Capacitors with High Cycling Endurance and Low Process TemperatureLomenzo, P. D., Slesazeck, S., Mikolajick, T. & Schroeder, U., May 2020, 2020 IEEE International Memory Workshop, IMW 2020 - Proceedings. Institute of Electrical and Electronics Engineers (IEEE), 9108146Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Inherent Charge-Sharing-Free Dynamic Logic Gates Employing Transistors With Multiple Independent InputsTrommer, J., Simon, M., Slesazeck, S., Weber, W. M. & Mikolajick, T., 9 Apr 2020, In: IEEE journal of the Electron Devices Society. 8, p. 740-747, 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Normally-Off Operation of Lateral Field-Effect Transistors Fabricated from Ultrapure GaN/AlGaN HeterostructuresSchmult, S., Wirth, S., Solovyev, V. V., Hentschel, R., Wachowiak, A., Scheinert, T., Großer, A. & 2 others, 1 Apr 2020, In: Physica Status Solidi (A) Applications and Materials Science. 217, 7, 1900732Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Photoluminescence dynamics in few-layer InSeVenanzi, T., Arora, H., Winnerl, S., Pashkin, A., Chava, P., Patanè, A., Kovalyuk, Z. D. & 6 others, Apr 2020, In: Physical review materials. 4, 4, 044001Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Switching and Charge Trapping in HfO₂-based Ferroelectric FETs: An Overview and Potential ApplicationsMulaosmanovic, H., Breyer, E. T., Mikolajick, T. & Slesazeck, S., Apr 2020, 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings. Institute of Electrical and Electronics Engineers (IEEE), 9118005Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• The Past, the Present, and the Future of Ferroelectric MemoriesMikolajick, T., Schroeder, U. & Slesazeck, S., Apr 2020, In: IEEE transactions on electron devices : ED. 67, 4, p. 1434 - 1443, 10 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• HfxZr1 − xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparisonMaterano, M., Richter, C., Mikolajick, T. & Schroeder, U., Mar 2020, In:  Journal of vacuum science & technology : JVST ; A, Vacuum, surfaces, and films. 38, 2, 022402Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Influence of the active leakage current pathway on the potential induced degradation of CIGS thin film solar modulesVoswinckel, S., Mikolajick, T. & Wesselak, V., Feb 2020, In:  Solar energy : the official journal of the International Solar Energy Society. 197, p. 455-461, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article