Publications

2020

• Depolarization as Driving Force in Antiferroelectric Hafnia and Ferroelectric Wake-UpLomenzo, P. D., Richter, C., Mikolajick, T. & Schroeder, U., 23 Jun 2020, In: ACS applied electronic materials. 2, 6, p. 1583-1595, 13 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Hafnium oxide as an enabler for competitive ferroelectric devicesMikolajick, T., Mulaosmanovic, H., Lomenzo, P., Hoffmann, M., Slesazeck, S. & Schroeder, U., Jun 2020, p. 1-2, 2 p.Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Size effect of electronic properties in highly arsenic-doped silicon nanowiresMauersberger, T., Ibrahim, I., Grube, M., Heinzig, A., Mikolajick, T. & Weber, W. M., Jun 2020, In: Solid-state electronics. 168, 107724Electronic (full-text) versionResearch output: Contribution to journal > Research article
• SoC compatible 1 T1 C FeRAM memory array based on ferroelectric Hf0.5Zr0.5O2Okuno, J., Kunihiro, T., Konishi, K., Maemura, H., Shute, Y., Sugaya, F., Materano, M. & 7 others, Jun 2020, 2020 IEEE Symposium on VLSI Technology. Honolulu: Institute of Electrical and Electronics Engineers (IEEE), 9265063Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Towards scalable reconfigurable field effect transistor using flash lamp annealingKhan, M. B., Ghosh, S., Prucnal, S., Mauersberger, T., Hubner, R., Simon, M., Mikolajick, T. & 2 others, Jun 2020Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Endurance and targeted programming behavior of HfO2-FeFETsZhou, H., Mennenga, J. O. M., Müller, M. N. S., Müller, M. N. S., Trentzsch, M., Trentzsch, M., Beyer, S. D. S. & 1 others, May 2020, 2020 IEEE International Memory Workshop (IMW). Dresden: Institute of Electrical and Electronics Engineers (IEEE), 9108131Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• FeFET: A versatile CMOS compatible device with game-changing potentialBeyer, S., Dünkel, S., Trentzsch, M., Müller, J., Hellmich, A., Utess, D., Paul, J. & 22 others, May 2020, 2020 IEEE International Memory Workshop (IMW). Dresden: Institute of Electrical and Electronics Engineers (IEEE), 9108150Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Thickness Scaling of AFE-RAM ZrO2 Capacitors with High Cycling Endurance and Low Process TemperatureLomenzo, P. D., Slesazeck, S., Mikolajick, T. & Schroeder, U., May 2020, 2020 IEEE International Memory Workshop, IMW 2020 - Proceedings. Institute of Electrical and Electronics Engineers (IEEE), 9108146Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Inherent Charge-Sharing-Free Dynamic Logic Gates Employing Transistors With Multiple Independent InputsTrommer, J., Simon, M., Slesazeck, S., Weber, W. M. & Mikolajick, T., 9 Apr 2020, In: IEEE journal of the Electron Devices Society. 8, p. 740-747, 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Normally-Off Operation of Lateral Field-Effect Transistors Fabricated from Ultrapure GaN/AlGaN HeterostructuresSchmult, S., Wirth, S., Solovyev, V. V., Hentschel, R., Wachowiak, A., Scheinert, T., Großer, A. & 2 others, 1 Apr 2020, In: Physica Status Solidi (A) Applications and Materials Science. 217, 7, 1900732Electronic (full-text) versionResearch output: Contribution to journal > Research article