Publications

2020

• Magnetic and ferroelectric memoriesLocatelli, N., Diez, L. H. & Mikolajick, T., 1 Jan 2020, Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications - Computational Memory, Deep Learning, and Spiking Neural Networks. Elsevier , p. 97-134, 38 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
• A Silicon Nanowire Ferroelectric Field-Effect TransistorSessi, V., Simon, M., Mulaosmanovic, H., Pohl, D., Loeffler, M., Mauersberger, T., Fengler, F. P. & 5 others, 2020, In: Advanced electronic materials. 6, 4, p. 1901244, 1 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-MemoryBreyer, E. T., Mulaosmanovic, H., Trommer, J., Melde, T., Dunkel, S., Trentzsch, M., Beyer, S. & 2 others, 2020, In: IEEE journal of the Electron Devices Society. 8, p. 748-756Electronic (full-text) versionResearch output: Contribution to journal > Research article
• FeFETs for Neuromorphic SystemsMulaosmanovic, H., Mikolajick, T. & Slesazeck, S., 2020, Topics in Applied Physics. Springer, p. 399-411, 13 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
• Flexible memory, bit-passing and mixed logic/ memory operation of two intercoupled FeFET arraysBreyer, E. T., Mulaosmanovic, H., Slesazeck, S. & Mikolajick, T., 2020, IEEE International Symposium on Circuits and Systems (ISCAS). Institute of Electrical and Electronics Engineers (IEEE), 9181279Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Nonvolatile Field-Effect Transistors Using Ferroelectric-Doped HfO₂ FilmsSchroeder, U., Slesazeck, S., Mulaosmanovic, H. & Mikolajick, T., 2020, Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications. 2 ed., Springer, p. 79-96, 18 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
• Quantitative Characterization of Reconfigurable Transistor Logic Gates.Raitza, M., Märcker, S., Trommer, J., Heinzig, A., Klüppelholz, S., Baier, C. & Kumar, A., 2020, In: IEEE access. 8, p. 112598-112614, 17 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Reliability improvement of ferroelectric hf0.5zr0.5o2 thin films by lanthanum doping for feram applicationsMehmood, F., Mikolajick, T. & Schroeder, U., 2020Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devicesPark, M. H., Lee, D. H., Yang, K., Park, J., Yu, G. T., Park, H. W., Materano, M. & 5 others, 2020, In: Journal of Materials Chemistry. C, Materials for optical and electronic devices. 8, 31, p. 10526-10550, 25 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• SOTF-BTI - An S-parameters based on-the-fly bias temperature instability characterization methodChohan, T., Slesazeck, S., Krause, G., Trommer, J., Lehmann, S. & Mikolajick, T., 2020Electronic (full-text) versionResearch output: Contribution to conferences > Paper