Publications

2020

• Nonvolatile Field-Effect Transistors Using Ferroelectric-Doped HfO₂ FilmsSchroeder, U., Slesazeck, S., Mulaosmanovic, H. & Mikolajick, T., 2020, Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications. 2 ed., Springer, p. 79-96, 18 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
• Quantitative Characterization of Reconfigurable Transistor Logic Gates.Raitza, M., Märcker, S., Trommer, J., Heinzig, A., Klüppelholz, S., Baier, C. & Kumar, A., 2020, In: IEEE access. 8, p. 112598-112614, 17 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Reliability improvement of ferroelectric hf0.5zr0.5o2 thin films by lanthanum doping for feram applicationsMehmood, F., Mikolajick, T. & Schroeder, U., 2020Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devicesPark, M. H., Lee, D. H., Yang, K., Park, J., Yu, G. T., Park, H. W., Materano, M. & 5 others, 2020, In: Journal of Materials Chemistry. C, Materials for optical and electronic devices. 8, 31, p. 10526-10550, 25 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• SOTF-BTI - An S-parameters based on-the-fly bias temperature instability characterization methodChohan, T., Slesazeck, S., Krause, G., Trommer, J., Lehmann, S. & Mikolajick, T., 2020, 5 p.Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Surface related differences between uncoated versus carbon-coated silicon nanowire electrodes on performance in lithium ion batteriesKrause, A., Langklotz, U., Pohl, D., Tkacheva, O., Pohl, D., Nielsch, K., Mikolajick, T. & 1 others, 2020, In: Journal of energy storage. 27, p. 101052, 1 p.Research output: Contribution to journal > Research article
• Switching in Nanoscale Hafnium Oxide-Based Ferroelectric TransistorsMulaosmanovic, H., Schroeder, U., Mikolajick, T. & Slesazeck, S., 2020, Topics in Applied Physics. Springer, p. 97-108, 12 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report

2019

• On the Origin of the Large Remanent Polarization in La:HfO 2Schenk, T., Fancher, C. M., Park, M. H., Richter, C., Künneth, C., Kersch, A., Jones, J. L. & 2 others, 19 Dec 2019, In: Advanced electronic materials. 5, 12, 1900303Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Critical parameters for the presence of a 2DEG in GaN/AlxGa1−xN heterostructuresScheinert, T., Mikolajick, T. & Schmult, S., 1 Dec 2019, In: AIP advances. 9, 12, 125018Electronic (full-text) versionResearch output: Contribution to journal > Research article
• A 2TnC ferroelectric memory gain cell suitable for compute-in-memory and neuromorphic applicationSlesazeck, S., Ravsher, T., Havel, V., Breyer, E. T., Mulaosmanovic, H. & Mikolajick, T., Dec 2019Electronic (full-text) versionResearch output: Contribution to conferences > Paper