Publications

2020

• Switching in Nanoscale Hafnium Oxide-Based Ferroelectric TransistorsMulaosmanovic, H., Schroeder, U., Mikolajick, T. & Slesazeck, S., 2020, Topics in Applied Physics. Springer, p. 97-108, 12 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report

2019

• On the Origin of the Large Remanent Polarization in La:HfO 2Schenk, T., Fancher, C. M., Park, M. H., Richter, C., Künneth, C., Kersch, A., Jones, J. L. & 2 others, 19 Dec 2019, In: Advanced electronic materials. 5, 12, 1900303Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Critical parameters for the presence of a 2DEG in GaN/AlxGa1−xN heterostructuresScheinert, T., Mikolajick, T. & Schmult, S., 1 Dec 2019, In: AIP advances. 9, 12, 125018Electronic (full-text) versionResearch output: Contribution to journal > Research article
• A 2TnC ferroelectric memory gain cell suitable for compute-in-memory and neuromorphic applicationSlesazeck, S., Ravsher, T., Havel, V., Breyer, E. T., Mulaosmanovic, H. & Mikolajick, T., Dec 2019Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Material perspectives of HfO₂-based ferroelectric films for device applicationsToriumi, A., Xu, L., Mori, Y., Tian, X., Lomenzo, P. D., Mulaosmanovic, H., Materano, M. & 2 others, Dec 2019Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf_0.5Zr_0.5O₂ CapacitorsMehmood, F., Hoffmann, M., Lomenzo, P. D., Richter, C., Materano, M., Mikolajick, T. & Schroeder, U., 1 Nov 2019, In: Advanced materials interfaces. 6, 21, 1901180Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Adoption of 2T2C ferroelectric memory cells for logic operationRavsher, T., Mulaosmanovic, H., Breyer, E. T., Havel, V., Mikolajick, T. & Slesazeck, S., Nov 2019, 2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS). Institute of Electrical and Electronics Engineers (IEEE), p. 791-794, 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Local structural investigation of hafnia-zirconia polymorphs in powders and thin films by X-ray absorption spectroscopySchenk, T., Anspoks, A., Jonane, I., Ignatans, R., Johnson, B. S., Jones, J. L., Tallarida, M. & 6 others, Nov 2019, In: Acta materialia. 180, p. 158-169, 12 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Simulation of integrate-and-fire neuron circuits using HfO₂-based ferroelectric field effect transistorsSuresh, B., Bertele, M., Breyer, E. T., Klein, P., Mulaosmanovic, H., Mikolajick, T., Slesazeck, S. & 1 others, Nov 2019, 2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS). Institute of Electrical and Electronics Engineers (IEEE), p. 229-232, 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Correction to Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering: (Advanced Materials Interfaces, (1900042), 10.1002/admi.201900042)Mittmann, T., Materano, M., Lomenzo, P. D., Park, M. H., Stolichnov, I., Cavalieri, M., Zhou, C. & 7 others, 1 Oct 2019, In: Advanced materials interfaces. Vol. 6. p. 1901528Electronic (full-text) versionResearch output: Contribution to specialist publication > Corrections (errata and retractions)