Publications

2019

• Impact of BTI Stress on RF Small Signal Parameters of FDSOI MOSFETsChohan, T., Slesazeck, S., Trommer, J., Krause, G., Bossu, G., Lehmann, S. & Mikolajick, T., Oct 2019, 2019 IEEE International Integrated Reliability Workshop (IIRW). Institute of Electrical and Electronics Engineers (IEEE), Vol. 2019. 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Negative Capacitance for Electrostatic SupercapacitorsHoffmann, M., Fengler, F. P. G., Max, B., Schroeder, U., Slesazeck, S. & Mikolajick, T., Oct 2019, In: Advanced energy materials. 9, 40Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Novel Quantum Dot Based Memories with Many Days of Storage Time: Last Steps towards the Holy Grail?Bimberg, D., Mikolajick, T. & Wallart, X., Oct 2019Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Broad Phase Transition of Fluorite-Structured Ferroelectrics for Large Electrocaloric EffectPark, M. H., Mikolajick, T., Schroeder, U. & Hwang, C. S., 1 Sep 2019, In: Physica Status Solidi - Rapid Research Letters. 13, 9, 1900177Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Eliminating Charge Sharing in Clocked Logic Gates on the Device Level Employing Transistors with Multiple Independent InputsTrommer, J., Simon, M., Slesazeck, S., Weber, W. M. & Mikolajick, T., Sep 2019, 49th European Solid-State Device Research Conference, ESSDERC 2019. Editions Frontieres, p. 134-137, 4 p., 8901730Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-MemoryBreyer, E. T., Mulaosmanovic, H., Trommer, J., Melde, T., Dunkel, S., Trentzsch, M., Beyer, S. & 2 others, Sep 2019, 49th European Solid-State Device Research Conference, ESSDERC 2019. Editions Frontieres, p. 118-121, 4 p., 8901735Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Nanoscale resistive switching memory devices: a reviewSlesazeck, S. & Mikolajick, T., 30 Aug 2019, In: Nanotechnology. 30, 352003Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Towards Oxide Electronics: a RoadmapColl, M., Fontcuberta, J., Althammer, M., Bibes, M., Boschker, H., Calleja, A., Cheng, G. & 49 others, 15 Jul 2019, In: Applied Surface Science : a Journal Devoted to Applied Physics and Chemistry of Surfaces and Interfaces. 482, p. 1-93, 93 p.Electronic (full-text) versionResearch output: Contribution to journal > Review article
• Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by SputteringMittmann, T., Materano, M., Lomenzo, P. D., Park, M. H., Stolichnov, I., Cavalieri, M., Zhou, C. & 7 others, 7 Jun 2019, In: Advanced materials interfaces. 6, 11, 1900042Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Improvement of NbO _x-based threshold switching devices by implementing multilayer stacksHerzig, M., Weiher, M., Ascoli, A., Tetzlaff, R., Mikolajick, T. & Slesazeck, S., 6 Jun 2019, In: Semiconductor science and technology. 34, 7, 075005Electronic (full-text) versionResearch output: Contribution to journal > Research article