Publications

2019

• Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect TransistorsWinkler, F., Pesic, M., Richter, C., Hoffmann, M., Mikolajick, T. & Bartha, J. W., Jun 2019, p. 51-52, 2 p.Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operationHoffmann, M., Slesazeck, S. & Mikolajick, T., Jun 2019, p. 97-98, 2 p.Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Variants of Ferroelectric Hafnium Oxide based Nonvolatile MemoriesMikolajick, T., Mulaosmanovic, H., Hoffmann, M., Max, B., Mittmann, T., Schroeder, U. & Slesazeck, S., Jun 2019, p. 207-208, 2 p.Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Multi-staged deposition of trench-gate oxides for power MOSFETsNeuber, M., Storbeck, O., Langner, M., Stahrenberg, K. & Mikolajick, T., May 2019, In:  Journal of vacuum science & technology : JVST ; B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena. 37, 032202Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Retention characteristics of Hf_0.5Zr_0.5O₂-based ferroelectric tunnel junctionsMax, B., Mikolajick, T., Hoffmann, M. & Slesazeck, S., May 2019, 2019 IEEE 11th International Memory Workshop (IMW). Institute of Electrical and Electronics Engineers (IEEE), 8739765Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Uniting the trinity of ferroelectric HfO₂ memory devices in a single memory cellSlesazeck, S., Havel, V., Breyer, E., Mulaosmanovic, H., Hoffmann, M., Max, B., Duenkel, S. & 1 others, May 2019, 2019 IEEE 11th International Memory Workshop (IMW). Monterey: Institute of Electrical and Electronics Engineers (IEEE), p. 20 - 23, 8739742Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Scaling Aspects of Nanowire Schottky Junction based Reconfigurable Field Effect TransistorsBaldauf, T., Heinzig, A., Mikolajick, T. & Weber, W. M., Apr 2019Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Designing Efficient Circuits Based on Runtime-Reconfigurable Field-Effect TransistorsRai, S., Trommer, J., Raitza, M., Mikolajick, T., Weber, W. M. & Kumar, A., Mar 2019, In: IEEE transactions on very large scale integration (VLSI) systems. 27, 3, p. 560-572, 13 p., 3Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin filmsIslamov, D. R., Gritsenko, V. A., Perevalov, T. V., Pustovarov, V. A., Orlov, O. M., Chernikova, A. G., Markeev, A. M. & 4 others, Mar 2019, In: Acta materialia. 166, p. 47-55Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Magneto-optical confirmation of Landau level splitting in a GaN/AlGaN 2DEG grown on bulk GaNSchmult, S., Solovyev, V. V., Wirth, S., Großer, A., Mikolajick, T. & Kukushkin, I. V., Mar 2019, In:  Journal of vacuum science & technology : JVST ; B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena. 37, 2, 021210Electronic (full-text) versionResearch output: Contribution to journal > Research article