Publications
675 Entries
2019
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Multi-staged deposition of trench-gate oxides for power MOSFETs, May 2019, In: Journal of vacuum science & technology : JVST ; B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena. 37, 032202Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Retention characteristics of Hf0.5Zr0.5O2-based ferroelectric tunnel junctions, May 2019, 2019 IEEE 11th International Memory Workshop (IMW). Institute of Electrical and Electronics Engineers (IEEE), 8739765Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Uniting the trinity of ferroelectric HfO2 memory devices in a single memory cell, May 2019, 2019 IEEE 11th International Memory Workshop (IMW). Monterey: Institute of Electrical and Electronics Engineers (IEEE), p. 20 - 23, 8739742Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Scaling Aspects of Nanowire Schottky Junction based Reconfigurable Field Effect Transistors, Apr 2019Electronic (full-text) versionResearch output: Contribution to conferences > Paper
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Designing Efficient Circuits Based on Runtime-Reconfigurable Field-Effect Transistors, Mar 2019, In: IEEE transactions on very large scale integration (VLSI) systems. 27, 3, p. 560-572, 13 p., 3Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films, Mar 2019, In: Acta materialia. 166, p. 47-55Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Magneto-optical confirmation of Landau level splitting in a GaN/AlGaN 2DEG grown on bulk GaN, Mar 2019, In: Journal of vacuum science & technology : JVST ; B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena. 37, 2, 021210Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices, 19 Feb 2019, Proceedings of the 2018 26th IFIP/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2018. IEEE Computer Society, Washington , p. 180-183, 4 p., 8644809Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Pattern Formation With Locally Active S-Type NbOx Memristors, 14 Feb 2019, In: IEEE Transactions on Circuits and Systems : a publication of the IEEE Circuits and Systems Society. 1, Regular Papers. p. 2627-2638, 12 p.Research output: Contribution to journal > Research article
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Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating, Feb 2019, In: IEEE electron device letters. 40, 2, p. 216-219, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article