Publications
675 Entries
2019
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Junction Tuning by Ferroelectric Switching in Silicon Nanowire Schottky-Barrier Field Effect Transistors, 24 Jan 2019, 18th International Conference on Nanotechnology, NANO 2018. Institute of Electrical and Electronics Engineers (IEEE), 4 p., 8626257Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Deactivation of silicon surface states by Al-induced acceptor states from Al–O monolayers in SiO2, 7 Jan 2019, In: Journal of applied physics. 125, 015301Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Ferroelectric field effect transistor, 1 Jan 2019, Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices. Elsevier , p. 451-471, 21 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
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Ferroelectric memories, 1 Jan 2019, Advances in Non-volatile Memory and Storage Technology, Second Edition. Elsevier, p. 393-441, 49 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
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Ferroelectric one transistor/one capacitor memory cell, 1 Jan 2019, Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices. Elsevier , p. 413-424, 12 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
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Negative capacitance in HfO2- and ZrO2-based ferroelectrics, 1 Jan 2019, Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices. Elsevier , p. 473-493, 21 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
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An Area-Efficient 128-Channel Spike Sorting Processor for Real-Time Neural Recording With $0.175~ W/Channel in 65-nm CMOS, 2019, In: IEEE transactions on very large scale integration (VLSI) systems. 27, 1, p. 126-137, 12 p.Research output: Contribution to journal > Research article
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Carbon-doped MBE GaN: Spectroscopic insights, 2019, In: Journal of crystal growth. 514, p. 29-35, 7 p.Research output: Contribution to journal > Research article
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Deconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and Reliability, 2019, Technical Digest - International Electron Devices Meeting, IEDMElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf 0.5 Zr0.5 O2, 2019, 2018 IEEE International Electron Devices Meeting (IEDM). p. 31.6.1-31.6.4Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution