Publications

2019

• Deactivation of silicon surface states by Al-induced acceptor states from Al–O monolayers in SiO2Hiller, D., Jordan, P. M., Ding, K., Pomaska, M., Mikolajick, T. & König, D., 7 Jan 2019, In: Journal of applied physics. 125, 015301Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Ferroelectric field effect transistorMueller, J., Slesazeck, S. & Mikolajick, T., 1 Jan 2019, Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices. Elsevier , p. 451-471, 21 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
• Ferroelectric memoriesHwang, C. S. & Mikolajick, T., 1 Jan 2019, Advances in Non-volatile Memory and Storage Technology, Second Edition. Elsevier, p. 393-441, 49 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
• Negative capacitance in HfO₂- and ZrO₂-based ferroelectricsHoffmann, M., Slesazeck, S., Mikolajick, T. & Hwang, C. S., 1 Jan 2019, Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices. Elsevier , p. 473-493, 21 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
• An Area-Efficient 128-Channel Spike Sorting Processor for Real-Time Neural Recording With $0.175~ W/Channel in 65-nm CMOSDo, A. T., Zeinolabedin, S. M. A., Jeon, D., Sylvester, D. & Kim, T. T., 2019, In: IEEE transactions on very large scale integration (VLSI) systems. 27, 1, p. 126-137, 12 p.Research output: Contribution to journal > Research article
• Carbon-doped MBE GaN: Spectroscopic insightsPohl, D., Solovyev, V., Röher, S., Gärtner, J., Kukushkin, I., Mikolajick, T., Großer, A. & 1 others, 2019, In: Journal of crystal growth. 514, p. 29-35, 7 p.Research output: Contribution to journal > Research article
• Deconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and ReliabilityPesic, M., Padovani, A., Slcsazeck, S., Mikolajick, T. & Larcher, L., 2019, Technical Digest - International Electron Devices Meeting, IEDMElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf _0.5 Zr_0.5 O₂Hoffmann, M., Max, B., Mittmann, T., Schroeder, U., Slesazeck, S. & Mikolajick, T., 2019, 2018 IEEE International Electron Devices Meeting (IEDM). p. 31.6.1-31.6.4Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Direct Correlation of Ferroelectric Properties and Memory Characteristics in Ferroelectric Tunnel JunctionsMax, B., Hoffmann, M., Slesazeck, S. & Mikolajick, T., 2019, In: IEEE journal of the Electron Devices Society. 7, 1, p. 1175-1181Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Ferroelectric FETs With 20-nm-Thick HfO₂ Layer for Large Memory Window and High PerformanceMulaosmanovic, H., Breyer, E. T., Mikolajick, T. & Slesazeck, S., 2019, In: IEEE transactions on electron devices : ED. 66, 9, p. 3828-3833, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article