Publications

2019

• Deconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and ReliabilityPesic, M., Padovani, A., Slcsazeck, S., Mikolajick, T. & Larcher, L., 2019, Technical Digest - International Electron Devices Meeting, IEDMElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf _0.5 Zr_0.5 O₂Hoffmann, M., Max, B., Mittmann, T., Schroeder, U., Slesazeck, S. & Mikolajick, T., 2019, 2018 IEEE International Electron Devices Meeting (IEDM). p. 31.6.1-31.6.4Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Direct Correlation of Ferroelectric Properties and Memory Characteristics in Ferroelectric Tunnel JunctionsMax, B., Hoffmann, M., Slesazeck, S. & Mikolajick, T., 2019, In: IEEE journal of the Electron Devices Society. 7, 1, p. 1175-1181Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Ferroelectric FETs With 20-nm-Thick HfO₂ Layer for Large Memory Window and High PerformanceMulaosmanovic, H., Breyer, E. T., Mikolajick, T. & Slesazeck, S., 2019, In: IEEE transactions on electron devices : ED. 66, 9, p. 3828-3833, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Ferroelectric Hf1-xZrxO2 Memories: Device Reliability and Depolarization FieldsLomenzo, P. D., Slesazeck, S., Hoffmann, M., Mikolajick, T., Schroeder, U. & Max, B., 2019, 2019 19th Non-Volatile Memory Technology Symposium (NVMTS), Durham, NC, USA. p. 1-8Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Ferroelectric one transistor/one capacitor memory cellPešić, M., Schroeder, U. & Mikolajick, T., 2019, Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices. Elsevier , p. 413-424, 12 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
• Next Generation Ferroelectric Memories enabled by Hafnium OxideMikolajick, T., Schroeder, U., Lomenzo, P. D., Breyer, E. T., Mulaosmanovic, H., Hoffmann, M., Mittmann, T. & 3 others, 2019, 2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)Research output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: Impact of oxygen and zirconiumSchroeder, U., Materano, M., Mittmann, T., Lomenzo, P. D., Mikolajick, T. & Toriumi, A., 2019, In: Japanese journal of applied physics. 58, SL, SL0801Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon NanowiresKhan, M. B., Deb, D., Kerbusch, J., Fuchs, F., Löffler, M., Banerjee, S., Mühle, U. & 5 others, 2019, In: Applied Sciences. 9, 17, p. 3462, 1 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Unveiling the double-well energy landscape in a ferroelectric layerHoffmann, M., Fengler, F., Herzig, M., Mittmann, T., Max, B., Schroeder, U., Negrea, R. & 3 others, 2019, In: Nature. 565, p. 464–467Electronic (full-text) versionResearch output: Contribution to journal > Research article