Publications

2018

• Interplay between ferroelectric and resistive switching in doped crystalline HfO2Max, B., Pesic, M., Slesazeck, S. & Mikolajick, T., 7 Apr 2018, In: Journal of applied physics. 123, 13Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Pyroelectricity of silicon-doped hafnium oxide thin filmsJachalke, S., Schenk, T., Park, M. H., Schroeder, U., Mikolajick, T., Stöcker, H., Mehner, E. & 1 others, 2 Apr 2018, In: Applied physics letters. 112, 142901Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric MaterialSchroeder, U., Richter, C., Park, M. H., Schenk, T., Pesic, M., Hoffmann, M., Fengler, F. P. G. & 6 others, 5 Mar 2018, In: Inorganic chemistry. 57, 5, p. 2752-2765, 14 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Analysis of Performance Instabilities of Hafnia‐Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization CurrentsFengler, F. P. G., Nigon, R., Muralt, P., Grimley, E. D., Sang, X., Sessi, V., Hentschel, R. & 3 others, 1 Mar 2018, In: Advanced electronic materials. 4, 3, 1700547Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Signal and Noise of Schottky-Junction Parallel Silicon Nanowire Transducers for Biochemical SensingPregl, S., Baraban, L., Sessi, V., Mikolajick, T., Weber, W. M. & Cuniberti, G., 1 Feb 2018, In: IEEE sensors journal. 18, 3, p. 967 - 975, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Germanium-based polarity-controllable transistorsWeber, W. M., Trommer, J., Heinzig, A. & Mikolajick, T., 1 Jan 2018, Functionality-Enhanced Devices An alternative to Moore’s Law. Institution of Engineering and Technology, p. 13-26, 14 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
• Random Number Generation Based on Ferroelectric SwitchingMulaosmanovic, H., Mikolajick, T. & Slesazeck, S., Jan 2018, In: IEEE electron device letters. 39, 1, p. 135-138, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Accumulative Polarization Reversal in Nanoscale Ferroelectric TransistorsMulaosmanovic, H., Mikolajick, T. & Slesazeck, S., 2018, In: ACS Applied Materials and Interfaces. 10, 28, p. 23997–24002, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyondDünkel, S., Trentzsch, M., Richter, R., Moll, P., Fuchs, C., Gehring, O., Majer, M. & 16 others, 2018, 2017 IEEE International Electron Devices Meeting (IEDM). p. 19.7.1-19.7.4Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• A physical synthesis flow for early technology evaluation of silicon nanowire based reconfigurable FETs.Rai, S., Rupani, A., Walter, D., Raitza, M., Heinzig, A., Baldauf, T., Trommer, J. & 3 others, 2018, DATE. p. 605-608, 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution