Publications

2018

• Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2Grimley, E. D., Schenk, T., Mikolajick, T., Schroeder, U. & LeBeau, J. M., 2018, In: Advanced materials interfaces. 5, 5, 1701258Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device ApplicationsPesic, M., Li, T., Di Lecce, V., Hoffmann, M., Materano, M., Richter, C., Max, B. & 4 others, 2018, In: IEEE journal of the Electron Devices Society. 6, p. 1019-1025, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Computing with ferroelectric FETs: Devices, models, systems, and applicationsAziz, A., Breyer, E., Chen, A., Chen, X., Datta, S., Gupta, S., Hoffmann, M. & 12 others, 2018, Proceedings of the 2018 Design, Automation and Test in Europe Conference and Exhibition, DATE 2018Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf0.5Zr0.5O2Hoffmann, M., Max, B., Mittmann, T., Schroeder, U., Slesazeck, S. & Mikolajick, T., 2018, 2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)Research output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technologyBreyer, E., Mulaosmanovic, H., Slesazeck, S. & Mikolajick, T., 2018, 2018 IEEE International Symposium on Circuits and Systems (ISCAS). Institute of Electrical and Electronics Engineers (IEEE), 5 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Domain formation in ferroelectric negative capacitance devicesHoffmann, M., Slesazeck, S. & Mikolajick, T., 2018, Device Research Conference - Conference Digest, DRCElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Effect of Annealing Ferroelectric HfO₂ Thin Films: In Situ, High Temperature X-Ray DiffractionPark, M., Chung, C., Schenk, T., Richter, C., Opsomer, K., Detavernier, C., Adelmann, C. & 3 others, 2018, In: Advanced electronic materials. 4, 7, 1800091Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Embedding hafnium oxide based FeFETs in the memory landscapeSlesazeck, S., Schroeder, U. & Mikolajick, T., 2018, ICICDT 2018 - International Conference on IC Design and Technology, ProceedingsElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistorsMikolajick, T., Slesazeck, S., Park, M. & Schroeder, U., 2018, In: MRS bulletin. 43, p. 340–346, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf(0.5)Zro(0.5)O(2) /Al2O3 Capacitor StacksMax, B., Hoffmann, M., Slesazeck, S. & Mikolajick, T., 2018, 2018 48TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC). p. 142-145Research output: Contribution to book/conference proceedings/anthology/report > Conference contribution