Publications
690 Entries
2018
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On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2, 28 May 2018, In: Journal of applied physics. 123, 20, 204101 Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Ferroelectric negative capacitance domain dynamics, 14 May 2018, In: Journal of applied physics. 123, 18, 184101Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study, 28 Apr 2018, In: Journal of applied physics. 123, 164101Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Interplay between ferroelectric and resistive switching in doped crystalline HfO2, 7 Apr 2018, In: Journal of applied physics. 123, 13Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Pyroelectricity of silicon-doped hafnium oxide thin films, 2 Apr 2018, In: Applied physics letters. 112, 142901Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material, 5 Mar 2018, In: Inorganic chemistry. 57, 5, p. 2752-2765, 14 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Analysis of Performance Instabilities of Hafnia‐Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents, 1 Mar 2018, In: Advanced electronic materials. 4, 3, 1700547Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Signal and Noise of Schottky-Junction Parallel Silicon Nanowire Transducers for Biochemical Sensing, 1 Feb 2018, In: IEEE sensors journal. 18, 3, p. 967 - 975, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Germanium-based polarity-controllable transistors, 1 Jan 2018, Functionality-Enhanced Devices An alternative to Moore’s Law. Institution of Engineering and Technology, p. 13-26, 14 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
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Random Number Generation Based on Ferroelectric Switching, Jan 2018, In: IEEE electron device letters. 39, 1, p. 135-138, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article