Publications

2018

• Domain formation in ferroelectric negative capacitance devicesHoffmann, M., Slesazeck, S. & Mikolajick, T., 2018, Device Research Conference - Conference Digest, DRCElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Effect of Annealing Ferroelectric HfO₂ Thin Films: In Situ, High Temperature X-Ray DiffractionPark, M., Chung, C., Schenk, T., Richter, C., Opsomer, K., Detavernier, C., Adelmann, C. & 3 others, 2018, In: Advanced electronic materials. 4, 7, 1800091Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Embedding hafnium oxide based FeFETs in the memory landscapeSlesazeck, S., Schroeder, U. & Mikolajick, T., 2018, ICICDT 2018 - International Conference on IC Design and Technology, ProceedingsElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistorsMikolajick, T., Slesazeck, S., Park, M. & Schroeder, U., 2018, In: MRS bulletin. 43, p. 340–346, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf(0.5)Zro(0.5)O(2) /Al2O3 Capacitor StacksMax, B., Hoffmann, M., Slesazeck, S. & Mikolajick, T., 2018, 2018 48TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC). p. 142-145Research output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Gating hysteresis as an indicator for silicon nanowire FET biosensorsIbarlucea, B., Römhildt, L., Zörgiebel, F., Pregl, S., Vahdatzadeh, M., Weber, W., Mikolajick, T. & 3 others, 2018, In: Applied Sciences (Switzerland). 8, 6, 950Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Hafnium oxide based ferroelectric devices for memories and beyondMikolajick, T., Schroeder, U. & Slesazeck, S., 2018, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Impact of hot carrier stress on small-signal parameters of FD-SOI NMOSFETsChohan, T., Slesazeck, S., Trommer, J., Pesic, M., Lehmann, S., Pakfar, A., Harame, D. & 1 others, 2018, 2017 IEEE International Integrated Reliability Workshop (IIRW)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Mimicking biological neurons with a nanoscale ferroelectric transistorMulaosmanovic, H., Chicca, E., Bertele, M., Mikolajick, T. & Slesazeck, S., 2018, In: Nanoscale. 10, 46, p. 21755-21763, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Normally-off operating GaN-based pseudovertical MOSFETs with MBE grown source regionHentschel, R., Schmult, S., Wachowiak, A., Grosser, A., Gaertner, J. & Mikolajick, T., 2018, In:  Journal of vacuum science & technology : JVST ; B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena. 36, 2, 02D109Electronic (full-text) versionResearch output: Contribution to journal > Research article