Publications
668 Entries
2025
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TCAD Analysis on the Geometry Effects in Three-Independent-Gates Reconfigurable FETs, 2025, SISPAD 2025 - International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers (IEEE), p. 1-4Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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The Hodgkin-Huxley Neuristor, 2025, International Joint Conference on Neural Networks, IJCNN 2025 - Proceedings. Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Verilog-A look-up table model of a TIG-RFET compatible with 22 nm FDSOI design rules satisfying Gummel Symmetry, 2025, 2025 14th International Conference on Modern Circuits and Systems Technologies, MOCAST 2025 - Proceedings. 2025 ed., Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
2024
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Roadmap for Schottky barrier transistors, 1 Dec 2024, In: Nano futures. 8, 4, 35 p., 042001Electronic (full-text) versionResearch output: Contribution to journal > Review article
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Mechanism of Antiferroelectricity in Polycrystalline ZrO2, 1 Oct 2024, In: Advanced functional materials. 34, 40, 2405513Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Roadmap to neuromorphic computing with emerging technologies, 1 Oct 2024, In: APL materials. 1282024), 10, 60 p., 109201Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Weight Update in Ferroelectric Memristors with Identical and Nonidentical Pulses, 25 Sep 2024, In: ACS Applied Materials and Interfaces. 16, 38, p. 51109-51117, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Tuning the Electronic Characteristics of Monolayer MoS2-Based Transistors by Ion Irradiation: The Role of the Substrate, Sep 2024, In: Advanced electronic materials. 10 (2024), 9, 10 p., 2400037Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of ZrxHf1-xO2-Based Capacitors, 27 Aug 2024, In: ACS applied electronic materialsElectronic (full-text) versionResearch output: Contribution to journal > Research article
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Ferroelectric Al0.85Sc0.15N and Hf0.5Zr0.5O2 Domain Switching Dynamics, 14 Aug 2024, In: ACS Applied Materials and Interfaces. 16, 32, p. 42415-42425, 11 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article