Publications

2018

• On the stabilization of ferroelectric negative capacitance in nanoscale devicesHoffmann, M., Pešić, M., Slesazeck, S., Schroeder, U. & Mikolajick, T., 2018, In: Nanoscale. 10, 23, p. 10891-10899Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO2Park, M. H., Chung, C., Schenk, T., Richter, C., Hoffmann, M., Wirth, S., Jones, J. L. & 2 others, 2018, In: Advanced electronic materials. 4, 4, 1700489Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Physical and circuit modeling of HfO₂ based ferroelectric memories and devicesPesic, M., Di Lecce, V., Hoffmann, M., Mulaosmanovic, H., Max, B., Schroeder, U., Slesazeck, S. & 2 others, 2018, 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Physical Approach to Ferroelectric Impedance Spectroscopy: The Rayleigh ElementSchenk, T., Hoffmann, M., Pešić, M., Park, M., Richter, C., Schroeder, U. & Mikolajick, T., 2018, In: Physical review applied. 10, 6, 064004Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Reconfigurable NAND-NOR circuits fabricated by a CMOS printing techniqueHeinzig, A., Pregl, S., Trommer, J., Mikolajick, T. & Weber, W., 2018, 2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Reconfigurable NAND/NOR logic gates in 28 nm HKMG and 22 nm FD-SOI FeFET technologyBreyer, E., Mulaosmanovic, H., Mikolajick, T. & Slesazeck, S., 2018, Technical Digest - International Electron Devices Meeting, IEDMElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Reconfigurable Si Nanowire Nonvolatile TransistorsPark, S. J., Jeon, D., Piontek, S., Grube, M., Ocker, J., Sessi, V., Heinzig, A. & 4 others, 2018, In: Advanced electronic materials. 4, 1, 1700399Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Review and perspective on ferroelectric HfO₂-based thin films for memory applicationsPark, M., Lee, Y., Mikolajick, T., Schroeder, U. & Hwang, C., 2018, In: MRS communications. 8, p. 795–808, 14 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• SDVSRM - a new SSRM based technique featuring dynamically adjusted, scanner synchronized sample voltages for measurement of actively operated devicesDoering, S., Wachowiak, A., Roetz, H., Eckl, S. & Mikolajick, T., 2018, In: Ultramicroscopy. 193, p. 24-32Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure OxidesPark, M., Lee, Y., Mikolajick, T., Schroeder, U. & Hwang, C., 2018, In: Advanced electronic materials. 5, 3, 1800522Electronic (full-text) versionResearch output: Contribution to journal > Research article