Publications

2018

• Hafnium oxide based ferroelectric devices for memories and beyondMikolajick, T., Schroeder, U. & Slesazeck, S., 2018, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Impact of hot carrier stress on small-signal parameters of FD-SOI NMOSFETsChohan, T., Slesazeck, S., Trommer, J., Pesic, M., Lehmann, S., Pakfar, A., Harame, D. & 1 others, 2018, 2017 IEEE International Integrated Reliability Workshop (IIRW)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Mimicking biological neurons with a nanoscale ferroelectric transistorMulaosmanovic, H., Chicca, E., Bertele, M., Mikolajick, T. & Slesazeck, S., 2018, In: Nanoscale. 10, 46, p. 21755-21763, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Normally-off operating GaN-based pseudovertical MOSFETs with MBE grown source regionHentschel, R., Schmult, S., Wachowiak, A., Grosser, A., Gaertner, J. & Mikolajick, T., 2018, In:  Journal of vacuum science & technology : JVST ; B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena. 36, 2, 02D109Electronic (full-text) versionResearch output: Contribution to journal > Research article
• On the stabilization of ferroelectric negative capacitance in nanoscale devicesHoffmann, M., Pešić, M., Slesazeck, S., Schroeder, U. & Mikolajick, T., 2018, In: Nanoscale. 10, 23, p. 10891-10899Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO2Park, M. H., Chung, C., Schenk, T., Richter, C., Hoffmann, M., Wirth, S., Jones, J. L. & 2 others, 2018, In: Advanced electronic materials. 4, 4, 1700489Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Physical and circuit modeling of HfO₂ based ferroelectric memories and devicesPesic, M., Di Lecce, V., Hoffmann, M., Mulaosmanovic, H., Max, B., Schroeder, U., Slesazeck, S. & 2 others, 2018, 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Physical Approach to Ferroelectric Impedance Spectroscopy: The Rayleigh ElementSchenk, T., Hoffmann, M., Pešić, M., Park, M., Richter, C., Schroeder, U. & Mikolajick, T., 2018, In: Physical review applied. 10, 6, 064004Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Reconfigurable NAND-NOR circuits fabricated by a CMOS printing techniqueHeinzig, A., Pregl, S., Trommer, J., Mikolajick, T. & Weber, W., 2018, 2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Reconfigurable NAND/NOR logic gates in 28 nm HKMG and 22 nm FD-SOI FeFET technologyBreyer, E., Mulaosmanovic, H., Mikolajick, T. & Slesazeck, S., 2018, Technical Digest - International Electron Devices Meeting, IEDMElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution