Publications

2017

• Modeling and design considerations for negative capacitance field-effect transistorsHoffmann, M., Pešić, M., Slesazeck, S., Schroeder, U. & Mikolajick, T., 2017, Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - ProceedingsElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Novel ferroelectric FET based synapse for neuromorphic systemsMulaosmanovic, H., Ocker, J., Muller, S., Noack, M., Muller, J., Polakowski, P., Mikolajick, T. & 1 others, 2017, Digest of Technical Papers - Symposium on VLSI TechnologyElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Optimizing process conditions for improved Hf_1 − xZrxO₂ ferroelectric capacitor performanceMittmann, T., Fengler, F., Richter, C., Park, M. H., Mikolajick, T. & Schroeder, U., 2017, In: Microelectronic Engineering. 178, p. 48-51, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Pseudo-vertical GaN-based trench gate metal oxide semiconductor field effect transistorHentschel, R., Wachowiak, A., Großer, A., Jahn, A., Merkel, U., Wille, A., Kalisch, H. & 3 others, 2017, ASDAM 2016 - Conference Proceedings, 11th International Conference on Advanced Semiconductor Devices and MicrosystemsElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Reliability comparison of ZrO₂-based DRAM high-k dielectrics under DC and AC stressKnebel, S., Zhou, D., Schroeder, U., Slesazeck, S., Pešíc, M., Agaiby, R., Heitmann, J. & 1 others, 2017, In: IEEE transactions on device and materials reliability. 17, 2, p. 324 - 330Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experimentPark, M. H., Lee, Y. H., Kim, H. J., Schenk, T., Lee, W., Kim, K. D., Fengler, F. P. G. & 3 others, 2017, In: Nanoscale. 9, 28, p. 9973-9986, 14 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• The RFET - A reconfigurable nanowire transistor and its application to novel electronic circuits and systemsMikolajick, T., Heinzig, A., Trommer, J., Baldauf, T. & Weber, W., 2017, In: Semiconductor science and technology. 32, 4, 043001Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Top-Down Technology for Reconfigurable Nanowire FETs with Symmetric On-CurrentsSimon, M., Heinzig, A., Trommer, J., Baldauf, T., Mikolajick, T. & Weber, W., 2017, In: IEEE transactions on nanotechnology. 16, 5, p. 812 - 819, 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Tuning the tunneling probability by mechanical stress in Schottky barrier based reconfigurable nanowire transistorsBaldauf, T., Heinzig, A., Trommer, J., Mikolajick, T. & Weber, W., 2017, In: Solid-state electronics. 128, p. 148 - 154Electronic (full-text) versionResearch output: Contribution to journal > Research article

2016

• High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved V_th stabilitySzabó, N., Wachowiak, A., Winzer, A., Ocker, J., Gärtner, J., Hentschel, R., Schmid, A. & 1 others, 18 Nov 2016, In:  Journal of vacuum science & technology : JVST ; B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena. 35, 01A102Electronic (full-text) versionResearch output: Contribution to journal > Research article