Publications

2017

• Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experimentPark, M. H., Lee, Y. H., Kim, H. J., Schenk, T., Lee, W., Kim, K. D., Fengler, F. P. G. & 3 others, 2017, In: Nanoscale. 9, 28, p. 9973-9986, 14 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• The RFET - A reconfigurable nanowire transistor and its application to novel electronic circuits and systemsMikolajick, T., Heinzig, A., Trommer, J., Baldauf, T. & Weber, W., 2017, In: Semiconductor science and technology. 32, 4, 043001Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Top-Down Technology for Reconfigurable Nanowire FETs with Symmetric On-CurrentsSimon, M., Heinzig, A., Trommer, J., Baldauf, T., Mikolajick, T. & Weber, W., 2017, In: IEEE transactions on nanotechnology. 16, 5, p. 812 - 819, 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Tuning the tunneling probability by mechanical stress in Schottky barrier based reconfigurable nanowire transistorsBaldauf, T., Heinzig, A., Trommer, J., Mikolajick, T. & Weber, W., 2017, In: Solid-state electronics. 128, p. 148 - 154Electronic (full-text) versionResearch output: Contribution to journal > Research article

2016

• High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved V_th stabilitySzabó, N., Wachowiak, A., Winzer, A., Ocker, J., Gärtner, J., Hentschel, R., Schmid, A. & 1 others, 18 Nov 2016, In:  Journal of vacuum science & technology : JVST ; B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena. 35, 01A102Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Atomic layer deposited TiOx/AlOx nanolaminates as moisture barriers for organic devicesNehm, F., Dollinger, F., Klumbies, H., Mueller-Meskamp, L., Leo, K., Singh, A., Richter, C. & 5 others, Nov 2016, In: Organic electronics. 38, p. 84-88, 5 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• The pyroelectric coefficient of free standing GaN grown by HVPEJachalke, S., Hofmann, P., Leibiger, G., Habel, F. S., Mehner, E., Leisegang, T., Meyer, D. C. & 1 others, 3 Oct 2016, In: Applied physics letters. 109, 14, 142906Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Charge-Trapping Phenomena in HfO₂ -Based FeFET-Type Nonvolatile MemoriesYurchuk, E., Muller, J., Muller, S., Paul, J., Pesic, M., Van Bentum, R., Schroeder, U. & 1 others, 22 Jul 2016, In: IEEE transactions on electron devices : ED. 63, 9, p. 3501 - 3507, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Trapped charge densities in Al2O3-based silicon surface passivation layersJordan, P. M., Simon, D. K., Mikolajick, T. & Dirnstorfer, I., 7 Jun 2016, In: Journal of applied physics. 119, 215306 Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Phosphor-converted white light from blue-emitting InGaN microrod LEDsSchimpke, T., Mandl, M., Stoll, I., Pohl-Klein, B., Bichler, D., Zwaschka, F., Strube-Knyrim, J. & 10 others, Jun 2016, In: Physica Status Solidi (A) Applications and Materials Science. 213, 6, p. 1577-1584Electronic (full-text) versionResearch output: Contribution to journal > Research article