Publications

2016

• Atomic layer deposited TiOx/AlOx nanolaminates as moisture barriers for organic devicesNehm, F., Dollinger, F., Klumbies, H., Mueller-Meskamp, L., Leo, K., Singh, A., Richter, C. & 5 others, Nov 2016, In: Organic electronics. 38, p. 84-88, 5 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• The pyroelectric coefficient of free standing GaN grown by HVPEJachalke, S., Hofmann, P., Leibiger, G., Habel, F. S., Mehner, E., Leisegang, T., Meyer, D. C. & 1 others, 3 Oct 2016, In: Applied physics letters. 109, 14, 142906Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Charge-Trapping Phenomena in HfO₂ -Based FeFET-Type Nonvolatile MemoriesYurchuk, E., Muller, J., Muller, S., Paul, J., Pesic, M., Van Bentum, R., Schroeder, U. & 1 others, 22 Jul 2016, In: IEEE transactions on electron devices : ED. 63, 9, p. 3501 - 3507, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Trapped charge densities in Al2O3-based silicon surface passivation layersJordan, P. M., Simon, D. K., Mikolajick, T. & Dirnstorfer, I., 7 Jun 2016, In: Journal of applied physics. 119, 215306 Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Phosphor-converted white light from blue-emitting InGaN microrod LEDsSchimpke, T., Mandl, M., Stoll, I., Pohl-Klein, B., Bichler, D., Zwaschka, F., Strube-Knyrim, J. & 10 others, Jun 2016, In: Physica Status Solidi (A) Applications and Materials Science. 213, 6, p. 1577-1584Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Printable parallel arrays of Si nanowire schottky-barrier-FETs with tunable polarity for complementary logicPregl, S., Heinzig, A., Baraban, L., Cuniberti, G., Mikolajick, T. & Weber, W. M., May 2016, In: IEEE transactions on nanotechnology. 15, 3, p. 549-556, 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• An Energy-Efficient, BiFeO₃-Coated Capacitive Switch with Integrated Memory and Demodulation FunctionsYou, T., Selvaraj, L. P., Zeng, H., Luo, W., Du, N., Bürger, D., Skorupa, I. & 5 others, Mar 2016, In: Advanced electronic materials. 2, 3, 1500352Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Silicon doping of HVPE GaN bulk-crystals avoiding tensile strain generationHofmann, P., Röder, C., Habel, F., Leibiger, G., Beyer, F. C., Gärtner, G., Eichler, S. & 1 others, 28 Jan 2016, In: Journal of Physics D: Applied Physics. 49, 7, 075502Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Analysis of threshold voltage instability in AlGaN/GaN MISHEMTs by forward gate voltage stress pulsesWinzer, A., Schuster, M., Hentschel, R., Ocker, J., Merkel, U., Jahn, A., Wachowiak, A. & 1 others, 18 Jan 2016, In: Physica Status Solidi (A) Applications and Materials Science. 213, 5, p. 1246-1251, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Rectifying filamentary resistive switching in ion-exfoliated LiNbO3 thin filmsPan, X., Shuai, Y., Wu, C., Luo, W., Sun, X., Zeng, H., Zhou, S. & 5 others, 18 Jan 2016, In: Applied physics letters. 108, 3, 032904Electronic (full-text) versionResearch output: Contribution to journal > Research article