Publications
675 Entries
2016
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Unfolding principle gives insight into physics behind threshold switching in a NbO memristor, 11 Jan 2016, 2015 International Conference on Memristive Systems, MEMRISYS 2015. Institute of Electrical and Electronics Engineers (IEEE), 7378399Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Tailoring the Physical Properties of Graphene, 1 Jan 2016, Graphene: Synthesis and Applications. CRC Press, p. 1-25, 25 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
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Analysis of Vth variability in NbOx-based threshold switches, 2016, 2016 16th Non-Volatile Memory Technology Symposium (NVMTS). p. 1-5Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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A physics-based spice model for the Nb2O5 threshold switching memristor, 2016, CNNA 2016; 15th International Workshop on Cellular Nanoscale Networks and their Applications. Tetzlaff, R. (ed.). Institute of Electrical and Electronics Engineers (IEEE), p. 59-60, 2 p.Research output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Bringing reconfigurable nanowire FETs to a logic circuits compatible process platform, 2016, Nanotechnology Materials and Devices Conference, NMDC 2016 - Conference ProceedingsElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Cellular Mechanisms of the Glucocorticoid-induced Osteoporosis and therapeutic Approaches, 2016, In: OsteologieResearch output: Contribution to journal > Research article
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Compact Nanowire Sensors Probe Microdroplets, 2016, In: Nano Letters. 16, 8, p. 4991–5000Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering, 2016, In: Journal of vacuum science & technology : JVST ; A, Vacuum, surfaces, and films. 34, 2, 021503Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications, 2016, European Solid-State Device Research ConferenceElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Conduction barrier offset engineering for DRAM capacitor scaling, 2016, In: Solid-state electronics. 115, Part B, p. 133-139, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article