Publications

2016

• High endurance strategies for hafnium oxide based ferroelectric field effect transistorMüller, J., Polakowski, P., Müller, S., Ocker, J., Mulaosmanovic, H., Mikolajick, T., Slesazeck, S. & 2 others, 2016, 2016 16th Non-Volatile Memory Technology Symposium, NVMTS 2016Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Impact of charge trapping on the ferroelectric switching behavior of doped HfO₂Pešic, M., Slesazeck, S., Schenk, T., Schroeder, U. & Mikolajick, T., 2016, In: Physica Status Solidi (A) Applications and Materials Science. 213, 2, p. 270-273, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Impact of field cycling on HfO₂ based non-volatile memory devicesSchroeder, U., Pesic, M., Schenk, T., Mulaosmanovic, H., Slesazeck, S., Ocker, J., Richter, C. & 13 others, 2016, 2016 46th European Solid-State Device Research Conference (ESSDERC). p. 364-368Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Integrating bottom-up grown silicon nanowires on a CMOS chip to realize high-density transistor arrays for chemical sensingSessi, V., Seichepine, F., Pregl, S., Szabo, N., Hierlemann, A., Mikolajick, T., Weber, W. & 1 others, 2016, 20th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2016Research output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Investigation of the reliability degradation of scaled SONOS memory transistorsOcker, J., Slesazeck, S., Hoffmann, R., Beyer, V., Skouris, A., Srowik, R., Buschbeck, S. & 2 others, 2016, 2015 IEEE International Integrated Reliability Workshop Final Report (IIRW). Institute of Electrical and Electronics Engineers (IEEE), Vol. 2015. 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Low leakage ZrO₂ based capacitors for sub 20 nm dynamic random access memory technology nodesPešić, M., Knebel, S., Geyer, M., Schmelzer, S., Böttger, U., Kolomiiets, N., Afanas'ev, V. & 6 others, 2016, In: Journal of applied physics. 119, 6, 064101Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Nonvolatile field-effect transistors using ferroelectric doped HfO₂ filmsSchroeder, U., Slesazeck, S. & Mikolajick, T., 2016, Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications. 1 ed., p. 57–72Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
• Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO₂Pešić, M., Hoffmann, M., Richter, C., Mikolajick, T. & Schroeder, U., 2016, In: Advanced functional materials. 26, 41, p. 7486-7494, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Novel approach for n-type doping of HVPE gallium nitride with germaniumHofmann, P., Krupinski, M., Habel, F., Leibiger, G., Weinert, B., Eichler, S. & Mikolajick, T., 2016, In: Journal of crystal growthElectronic (full-text) versionResearch output: Contribution to journal > Research article
• Reconfigurable nanowire transistors with multiple independent gates for efficient and programmable combinational circuitsTrommer, J., Heinzig, A., Baldauf, T., Mikolajick, T., Weber, W., Raitza, M. & Völp, M., 2016, Proceedings of the 2016 Design, Automation and Test in Europe Conference and Exhibition, DATE 2016Research output: Contribution to book/conference proceedings/anthology/report > Conference contribution