Publications

2016

• Integrating bottom-up grown silicon nanowires on a CMOS chip to realize high-density transistor arrays for chemical sensingSessi, V., Seichepine, F., Pregl, S., Szabo, N., Hierlemann, A., Mikolajick, T., Weber, W. & 1 others, 2016, 20th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2016Research output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Investigation of the reliability degradation of scaled SONOS memory transistorsOcker, J., Slesazeck, S., Hoffmann, R., Beyer, V., Skouris, A., Srowik, R., Buschbeck, S. & 2 others, 2016, 2015 IEEE International Integrated Reliability Workshop Final Report (IIRW). Institute of Electrical and Electronics Engineers (IEEE), Vol. 2015. 4 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Low leakage ZrO₂ based capacitors for sub 20 nm dynamic random access memory technology nodesPešić, M., Knebel, S., Geyer, M., Schmelzer, S., Böttger, U., Kolomiiets, N., Afanas'ev, V. & 6 others, 2016, In: Journal of applied physics. 119, 6, 064101Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Nonvolatile field-effect transistors using ferroelectric doped HfO₂ filmsSchroeder, U., Slesazeck, S. & Mikolajick, T., 2016, Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications. 1 ed., p. 57–72Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Chapter in book/Anthology/Report
• Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO₂Pešić, M., Hoffmann, M., Richter, C., Mikolajick, T. & Schroeder, U., 2016, In: Advanced functional materials. 26, 41, p. 7486-7494, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Novel approach for n-type doping of HVPE gallium nitride with germaniumHofmann, P., Krupinski, M., Habel, F., Leibiger, G., Weinert, B., Eichler, S. & Mikolajick, T., 2016, In: Journal of crystal growthElectronic (full-text) versionResearch output: Contribution to journal > Research article
• Reconfigurable nanowire transistors with multiple independent gates for efficient and programmable combinational circuitsTrommer, J., Heinzig, A., Baldauf, T., Mikolajick, T., Weber, W., Raitza, M. & Völp, M., 2016, Proceedings of the 2016 Design, Automation and Test in Europe Conference and Exhibition, DATE 2016Research output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Root cause of degradation in novel HfO2-based ferroelectric memoriesPesic, M., Fengler, F., Slesazeck, S., Schroeder, U., Mikolajick, T., Larcher, L. & Padovani, A., 2016, 2016 IEEE International Reliability Physics Symposium Proceedings. Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Strain-engineering for improved tunneling in reconfigurable silicon nanowire transistorsBaldauf, T., Heinzig, A., Mikolajick, T., Weber, W. & Trommer, J., 2016, 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• TEM Study of Schottky Junctions in Reconfigurable Silicon Nanowire DevicesBanerjee, S., Löffler, M., Muehle, U., Berent, K., Heinzig, A., Trommer, J., Weber, W. & 1 others, 2016, In: Advanced engineering materials. 18, 2, p. 180-184, 5 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article