Publications

2015

• Defect generation and activation processes in HfO₂ thin films: Contributions to stress-induced leakage currentsÖttking, R., Kupke, S., Nadimi, E., Leitsmann, R., Lazarevic, F., Plänitz, P., Roll, G. & 3 others, Mar 2015, In: Physica Status Solidi (A) Applications and Materials Science. 212, 3, p. 547-553, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• BiasMDP: Carrier lifetime characterization technique with applied bias voltageJordan, P. M., Simon, D. K., Mikolajick, T. & Dirnstorfer, I., 9 Feb 2015, In: Applied physics letters. 106, 6, 061602Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Thickness dependent barrier performance of permeation barriers made from atomic layer deposited alumina for organic devicesKlumbies, H., Schmidt, P., Haehnel, M., Singh, A., Schroeder, U., Richter, C., Mikolajick, T. & 5 others, Feb 2015, In: Organic electronics. 17, p. 138-143Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Integration of molecular-layer-deposited aluminum alkoxide interlayers into inorganic nanolaminate barriers for encapsulation of organic electronics with improved stress resistanceHossbach, C., Nehm, F., Singh, A., Klumbies, H., Fischer, D., Richter, C., Schroeder, U. & 5 others, Jan 2015, In:  Journal of vacuum science & technology : JVST ; A, Vacuum, surfaces, and films. 33, 1, 01A119Electronic (full-text) versionResearch output: Contribution to journal > Research article
• 2D Mapping of Chemical and Field Effect Passivation of Al₂O₃ on Silicon SubstratesJordan, P. M., Simon, D. K., Fengler, F. P., Mikolajick, T. & Dirnstorfer, I., 2015, In: Energy Procedia. 77, p. 91-98, 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Conference article
• Comparison of silicon nanowire growth on SiO₂ and on carbon substratesKrause, A., Grube, M., Mikolajick, T. & Weber, W. M., 2015, 16th International Conference on Advanced Batteries, Accumulators and Fuel Cells, ABAF 2015. Simonova, L. & Vondrak, J. (eds.). 1 ed., Electrochemical Society, Inc., p. 69-78, 10 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Complex internal bias fields in ferroelectric hafnium oxideSchenk, T., Hoffmann, M., Ocker, J., Pešić, M., Mikolajick, T. & Schroeder, U., 2015, In: ACS Applied Materials and Interfaces. 7, 36, p. 20224–20233, 10 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cellsMulaosmanovic, H., Slesazeck, S., Ocker, J., Pesic, M., Muller, S., Flachowsky, S., Muller, J. & 12 others, 2015, Technical Digest - International Electron Devices Meeting, IEDMElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospectsMüller, J., Polakowski, P., Mueller, S. & Mikolajick, T., 2015, In: ECS Journal of Solid State Science and Technology : JSS. 4, 5, N30Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂-Based FilmsPark, M. H., Lee, Y., Kim, H., Kim, Y., Moon, T., Kim, K., Müller, J. & 4 others, 2015, In: Advanced materials. 27, 11, p. 1811-1831, 21 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article