Publications

2014

• Reconfigurable nanowire electronics-enabling a single CMOS circuit technologyWeber, W., Heinzig, A., Trommer, J., Grube, M., Kreupl, F. & Mikolajick, T., Nov 2014, In: IEEE transactions on nanotechnology. 13, 6, p. 1020-1028, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• OLED compatible water-based nanolaminate encapsulation systems using ozone based starting layerSingh, A., Nehm, F., Müller-Meskamp, L., Hossbach, C., Albert, M., Schroeder, U., Leo, K. & 1 others, Oct 2014, In: Organic Electronics. 15, 10, p. 2587-2592, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Impact of scaling on the performance of HfO₂-based ferroelectric field effect transistorsYurchuk, E., Muller, J., Paul, J., Schlosser, T., Martin, D., Hoffmann, R., Mueller, S. & 5 others, 17 Sep 2014, In: IEEE transactions on electron devices : ED. 61, 11, p. 3699 - 3706, 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Local ion irradiation-induced resistive threshold and memory switching in Nb₂O₅/NbO_x filmsWylezich, H., Mähne, H., Rensberg, J., Ronning, C., Zahn, P., Slesazeck, S. & Mikolajick, T., 12 Sep 2014, In: ACS Applied Materials and Interfaces. 6, 20, p. 17474–17480, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Reconfigurable nanowire electronics - A reviewWeber, W., Heinzig, A., Trommer, J., Martin, D., Grube, M. & Mikolajick, T., 12 Aug 2014, In: Solid-state electronics. 102, p. 12-24, 13 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Atomic layer deposited high-κ nanolaminates for silicon surface passivationBenner, F., Jordan, P. M., Richter, C., Simon, D. K., Dirnstorfer, I., Knaut, M., Bartha, J. W. & 1 others, May 2014, In:  Journal of vacuum science & technology : JVST ; B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena. 32, 3, 03D110Electronic (full-text) versionResearch output: Contribution to journal > Research article
• The degradation process of high-k SiO₂/HfO₂ gate-stacks: A combined experimental and first principles investigationNadimi, E., Roll, G., Kupke, S., Öttking, R., Plänitz, P., Radehaus, C., Schreiber, M. & 5 others, May 2014, In: IEEE transactions on electron devices : ED. 61, 5, p. 1278-1283, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Conduction mechanisms and breakdown characteristics of Al₂O ₃-doped ZrO₂ high-k dielectrics for three-dimensional stacked metal-insulator-metal capacitorsKnebel, S., Schroeder, U., Zhou, D., Mikolajick, T. & Krautheim, G., Mar 2014, In: IEEE transactions on device and materials reliability. 14, 1, p. 154-160, 7 p., 6215028Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Influence of substrate quality on structural properties of AlGaN/GaN superlattices grown by molecular beam epitaxySchubert, F., Merkel, U., Mikolajick, T. & Schmult, S., 28 Feb 2014, In: Journal of applied physics. 115, 8, 083511Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Exploiting memristive BiFeO3 bilayer structures for compact sequential logicsYou, T., Shuai, Y., Luo, W., Du, N., Bürger, D., Skorupa, I., Hübner, R. & 6 others, 24 Feb 2014, In: Advanced Functional Materials. 24, 22, p. 3357-3365, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article