Publications

2014

• Schottky barrier-based silicon nanowire pH sensor with live sensitivity controlZörgiebel, F. M., Pregl, S., Römhildt, L., Opitz, J., Weber, W., Mikolajick, T., Baraban, L. & 1 others, Feb 2014, In: Nano research. 7, 2, p. 263-271, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• About the deformation of ferroelectric hysteresesSchenk, T., Yurchuk, E., Mueller, S., Schroeder, U., Starschich, S., Boettger, U. & Mikolajick, T., 2014, In: Applied Physics Reviews. 1, 4, 041103Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Analog resistive switching behavior of Al/Nb₂O₅/Al deviceMähne, H., Wylezich, H., Hanzig, F., Slesazeck, S., Rafaja, D. & Mikolajick, T., 2014, In: Semiconductor science and technology. 29, 10, 104002Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Dynamic off-state TDDB of ultra short channel HKMG nFETS and its implications on CMOS logic reliabilityKupke, S., Knebel, S., Rahman, S., Slesazeck, S., Mikolajick, T., Agaiby, R. & Trentzsch, M., 2014, 2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers (IEEE), p. 5B.1.1-5B.1.6, 6860661Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Electric field cycling behavior of ferroelectric hafnium oxideSchenk, T., Schroeder, U., Pešić, M., Popovici, M., Pershin, Y. & Mikolajick, T., 2014, In: ACS Applied Materials and Interfaces. 6, 22, p. 19744–19751, 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospectsMüller, J., Polakowski, P., Mueller, S. & Mikolajick, T., 2014, ECS Transactions. 8 ed., Vol. 64. p. 159-168Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Ferroelectricity in Si-doped HfO₂ revealed: A binary lead-free ferroelectricMartin, D., Müller, J., Schenk, T., Arruda, T. M., Kumar, A., Strelcov, E., Yurchuk, E. & 5 others, 2014, In: Advanced materials. 26, 48, p. 8198-8202, 5 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Film properties of low temperature HfO2 grown with H 2O, O3, or remote O2-plasmaRichter, C., Schenk, T., Schroeder, U. & Mikolajick, T., 2014, In:  Journal of vacuum science & technology : JVST ; A, Vacuum, surfaces, and films. 32, 1, 01A117 Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Impact of different dopants on the switching properties of ferroelectric hafniumoxideSchroeder, U., Yurchuk, E., Müller, J., Martin, D., Schenk, T., Polakowski, P., Adelmann, C. & 3 others, 2014, In: Japanese journal of applied physics. 53, 8S1, 08LE02Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Influence of nitrogen trap states on the electronic properties of high-k metal gate transistorsOcker, J., Kupke, S., Slesazeck, S., Mikolajick, T., Erben, E., Drescher, M., Naumann, A. & 2 others, 2014, 2014 IEEE International Workshop Integrated Reliability IIRW. Institute of Electrical and Electronics Engineers (IEEE), p. 86-89, 4 p., 7049517Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution