Publications
674 Entries
2014
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The degradation process of high-k SiO2/HfO2 gate-stacks: A combined experimental and first principles investigation, May 2014, In: IEEE transactions on electron devices : ED. 61, 5, p. 1278-1283, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Conduction mechanisms and breakdown characteristics of Al2O 3-doped ZrO2 high-k dielectrics for three-dimensional stacked metal-insulator-metal capacitors, Mar 2014, In: IEEE transactions on device and materials reliability. 14, 1, p. 154-160, 7 p., 6215028Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Influence of substrate quality on structural properties of AlGaN/GaN superlattices grown by molecular beam epitaxy, 28 Feb 2014, In: Journal of applied physics. 115, 8, 083511Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Exploiting memristive BiFeO3 bilayer structures for compact sequential logics, 24 Feb 2014, In: Advanced Functional Materials. 24, 22, p. 3357-3365, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Schottky barrier-based silicon nanowire pH sensor with live sensitivity control, Feb 2014, In: Nano research. 7, 2, p. 263-271, 9 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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About the deformation of ferroelectric hystereses, 2014, In: Applied Physics Reviews. 1, 4, 041103Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Analog resistive switching behavior of Al/Nb2O5/Al device, 2014, In: Semiconductor science and technology. 29, 10, 104002Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Dynamic off-state TDDB of ultra short channel HKMG nFETS and its implications on CMOS logic reliability, 2014, 2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers (IEEE), p. 5B.1.1-5B.1.6, 6860661Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Electric field cycling behavior of ferroelectric hafnium oxide, 2014, In: ACS Applied Materials and Interfaces. 6, 22, p. 19744–19751, 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects, 2014, ECS Transactions. 8 ed., Vol. 64. p. 159-168Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution