Publications

2013

• Mesoscopic analysis of leakage current suppression in ZrO ₂/Al₂O₃/ZrO₂ nano-laminatesMartin, D., Grube, M., Weinreich, W., Müller, J., Weber, W. M., Schröder, U., Riechert, H. & 1 others, 21 May 2013, In: Journal of applied physics. 113, 19, 194103Electronic (full-text) versionResearch output: Contribution to journal > Research article
• A systematic and comparative study of binary metal catalysts for carbon nanotube fabrication using CVD and laser evaporationJedrzejewska, A., Bachmatiuk, A., Ibrahim, I., Šreková, H., Nganou, C., Schüchner, F., Borowiak-Palen, E. & 4 others, 1 Jan 2013, In: Fullerenes Nanotubes and Carbon Nanostructures. 21, 4, p. 273-285, 13 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Application of mueller matrix spectroscopic ellipsometry to determine line edge roughness on photomasksHeinrich, A., Dirnstorfer, I., Bischoff, J., Richter, U., Ketelsen, H., Meiner, K. & Mikolajick, T., 2013, 29th European Mask and Lithography Conference. 88860LElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Channel length dependent sensor response of Schottky-barrier FET pH sensorsPregl, S., Zorgiebel, F., Baraban, L., Cuniberti, G., Mikolajick, T., Richter, C. & Weber, W., 2013, SENSORS, 2013 IEEE. Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Characterization of multilayer gate stacks by multi-phonon transient trap spectroscopyOcker, J., Slesazeck, S. & Mikolajick, T., 2013, 2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013. 6656301Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2Martin, D., Yurchuk, E., Müller, S., Müller, J., Paul, J., Sundquist, J., Slesazeck, S. & 5 others, 2013, In: Solid-State Electronics. 88, p. 65-68, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Dually active silicon nanowire transistors and circuits with equal electron and hole transportHeinzig, A., Mikolajick, T., Trommer, J., Grimm, D. & Weber, W., 2013, In: Nano Letters. 13, 9, p. 4176–4181Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memoriesMuller, J., Boscke, T., Muller, S., Yurchuk, E., Polakowski, P., Paul, J., Martin, D. & 14 others, 2013, IEDMElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET DevicesMueller, S., Mueller, J., Hoffmann, R., Yurchuk, E., Schloesser, T., Boschke, R., Paul, J. & 5 others, 2013, In: IEEE transactions on electron devices : ED. 60, 12, p. 4199-4205, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Hafnium oxide based CMOS compatible ferroelectric materialsSchroeder, U., Mueller, S., Mueller, J., Yurchuk, E., Martin, D., Adelmann, C., Schloesser, T. & 2 others, 2013, In: ECS Journal of Solid State Science and Technology. 2, 4, N69Electronic (full-text) versionResearch output: Contribution to journal > Research article