Publications

2013

• Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2Martin, D., Yurchuk, E., Müller, S., Müller, J., Paul, J., Sundquist, J., Slesazeck, S. & 5 others, 2013, In: Solid-State Electronics. 88, p. 65-68, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Dually active silicon nanowire transistors and circuits with equal electron and hole transportHeinzig, A., Mikolajick, T., Trommer, J., Grimm, D. & Weber, W., 2013, In: Nano Letters. 13, 9, p. 4176–4181Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memoriesMuller, J., Boscke, T., Muller, S., Yurchuk, E., Polakowski, P., Paul, J., Martin, D. & 14 others, 2013, IEDMElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET DevicesMueller, S., Mueller, J., Hoffmann, R., Yurchuk, E., Schloesser, T., Boschke, R., Paul, J. & 5 others, 2013, In: IEEE transactions on electron devices : ED. 60, 12, p. 4199-4205, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Hafnium oxide based CMOS compatible ferroelectric materialsSchroeder, U., Mueller, S., Mueller, J., Yurchuk, E., Martin, D., Adelmann, C., Schloesser, T. & 2 others, 2013, In: ECS Journal of Solid State Science and Technology. 2, 4, N69Electronic (full-text) versionResearch output: Contribution to journal > Research article
• HEMT test structure technology for fast on-wafer characterization of epitaxial GaN-on-Si materialSchuster, M., Wachowiak, A., Szabo, N., Jahn, A., Merkel, U., Ruf, A., Mikolajick, T. & 4 others, 2013, 2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013. 6656315Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin filmsGraham, A. P., Knebel, S., Melde, T., Mikolajick, T., Muller, J., Schroder, U., Sundqvist, J. & 1 others, 2013, In: Thin solid films. 533, p. 88-92Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Improvement of Al2O3 Passivation by Ti-DopingBenner, F., Knaut, M., Jordan, P. M., Dirnstorfer, I., Ocker, J., Bartha, J. W. & Mikolajick, T., 2013, p. 1156-1161, 6 p.Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Influence of frequency dependent time to breakdown on high-K/metal gate reliabilityKnebel, S., Kupke, S., Schroeder, U., Slesazeck, S., Mikolajick, T., Agaiby, R. & Trentzsch, M., 2013, In: IEEE transactions on electron devices : ED. 60, 7, p. 2368-2371, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Inline-characterization and step coverage optimization of deposited dielectrics in DRAM structuresKrupinski, M., Kasic, A., Hecht, T., Klude, M., Heitmann, J., Erben, E. & Mikolajick, T., 2013, In: IEEE transactions on semiconductor manufacturing. 26, 2, p. 253-259, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article