Publications
668 Entries
2013
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Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films, 2013, In: Thin solid films. 533, p. 88-92Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Improvement of Al2O3 Passivation by Ti-Doping, 2013, p. 1156-1161, 6 p.Electronic (full-text) versionResearch output: Contribution to conferences > Paper
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Influence of frequency dependent time to breakdown on high-K/metal gate reliability, 2013, In: IEEE transactions on electron devices : ED. 60, 7, p. 2368-2371, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Inline-characterization and step coverage optimization of deposited dielectrics in DRAM structures, 2013, In: IEEE transactions on semiconductor manufacturing. 26, 2, p. 253-259, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Key concepts behind forming-free resistive switching incorporated with rectifying transport properties, 2013, In: Scientific reports. 3, 2208Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Millisecond flash lamp annealing for LaLuO3 and LaScO 3 high-k dielectrics, 2013, In: Microelectronic Engineering. 109, p. 381-384, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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New color sensor concept based on single spectral tunable photodiode, 2013, ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference. IEEE Computer Society, Washington , p. 127-130, 4 p., 6818835Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Performance investigation and optimization of Si:HfO2 FeFETs on a 28 nm bulk technology, 2013, p. 248-251, 4 p.Electronic (full-text) versionResearch output: Contribution to conferences > Paper
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Reconfigurable nanowire electronics - Device principles and circuit prospects, 2013, ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference. IEEE Computer Society, Washington , p. 246-251, 6 p., 6818865Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Reliability Characteristics of Ferroelectric Si: HfO2 Thin Films for Memory Applications, 2013, In: IEEE transactions on device and materials reliability. 13, 1, p. 93 - 97, 5 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article