Publications

2013

• Key concepts behind forming-free resistive switching incorporated with rectifying transport propertiesShuai, Y., Ou, X., Luo, W., Mücklich, A., Bürger, D., Zhou, S., Wu, C. & 6 others, 2013, In: Scientific reports. 3, 2208Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Millisecond flash lamp annealing for LaLuO₃ and LaScO ₃ high-k dielectricsLehmann, J., Hübner, R., Borany, J. V., Skorupa, W., Mikolajick, T., Schäfer, A., Schubert, J. & 1 others, 2013, In: Microelectronic Engineering. 109, p. 381-384, 4 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• New color sensor concept based on single spectral tunable photodiodeWachowiak, A., Slesazeck, S., Jordan, P., Holz, J. & Mikolajick, T., 2013, ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference. IEEE Computer Society, Washington , p. 127-130, 4 p., 6818835Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Performance investigation and optimization of Si:HfO₂ FeFETs on a 28 nm bulk technologyMueller, S., Yurchuk, E., Slesazeck, S., Mikolajick, T., Müller, J., Herrmann, T. & Zaka, A., 2013, p. 248-251, 4 p.Electronic (full-text) versionResearch output: Contribution to conferences > Paper
• Reconfigurable nanowire electronics - Device principles and circuit prospectsWeber, W. M., Trommer, J., Martin, D., Grube, M., Heinzig, A. & Mikolajick, T., 2013, ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference. IEEE Computer Society, Washington , p. 246-251, 6 p., 6818865Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Reliability Characteristics of Ferroelectric Si: HfO2 Thin Films for Memory ApplicationsMikolajick, T., Mueller, S., Muller, J. & Schroeder, U., 2013, In: IEEE transactions on device and materials reliability. 13, 1, p. 93 - 97, 5 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Room temperature fabricated NbOx/Nb2O5 memory switching device with threshold switching effectMahne, H., Wylezich, H., Slesazeck, S., Mikolajick, T., Vesely, J., Klemm, V. & Rafaja, D., 2013, 2013 5th IEEE International Memory Workshop. Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Sensitivity analysis for OMOG and EUV photomasks characterized by UV-NIR Spectroscopic EllipsometryHeinrich, A., Dirnstorfer, I., Bischoff, J., Meiner, K., Richter, U. & Mikolajick, T., 2013, Photomask Technology 2013. 88801VElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Silicon nanowires - A versatile technology platformMikolajick, T., Heinzig, A., Trommer, J., Pregl, S., Grube, M., Cuniberti, G. & Weber, W., 2013, In: Physica Status Solidi - Rapid Research Letters. 7, 10, p. 793-799, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memoriesSchenk, T., Mueller, S., Schroeder, U., Materlik, R., Kersch, A., Popovici, M., Adelmann, C. & 2 others, 2013, European Solid-State Device Research ConferenceElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution