Publications

2012

• Low-cost caesium phosphate as n-dopant for organic light-emitting diodesWemken, J. H., Krause, R., Mikolajick, T. & Schmid, G., 1 Apr 2012, In: Journal of applied physics. 111, 7, 074502Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Reconfigurable silicon nanowire transistorsHeinzig, A., Slesazeck, S., Kreupl, F., Mikolajick, T. & Weber, W. M., 11 Jan 2012, In: Nano letters. 12, 1, p. 119-124, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Cool silicon ICT energy efficiency enhancementsEllinger, F., Mikolajik, T., Fettweis, G., Hentschel, D., Kolodinski, S., Warnecke, H., Reppe, T. & 31 others, 2012, IEEE 2012 International Semiconductor Conference Dresden-Grenoble, ISCDG 2012. Institute of Electrical and Electronics Engineers (IEEE), 4 p., 6360004Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMGMüller, J., Yurchuk, E., Schlösser, T., Paul, J., Hoffmann, R., Müller, S., Martin, D. & 11 others, 2012, VLSIElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Ferroelectricity in Simple Binary ZrO2 and HfO2Boscke, T. S., Bottger, U., Brauhaus, D., Frey, L., Mikolajick, T., Mueller, S., Muller, J. & 1 others, 2012, In: Nano letters. 12, 8, p. 4318–4323Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin filmsBerger, L., Jakschik, S., Klemm, V., Mahne, H., Martin, D., Mikolajick, T., Rafaja, D. & 1 others, 2012, In: Solid-state electronics. 72, p. 73-77Electronic (full-text) versionResearch output: Contribution to journal > Research article
• HfO 2-based ferroelectric field-effect transistors with 260 nm channel length and long data retentionYurchuk, E., Müller, J., Hoffmann, R., Paul, J., Martin, D., Boschke, R., Schlösser, T. & 6 others, 2012, 2012 4th IEEE International Memory Workshop. Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Incipient Ferroelectricity in Al-Doped HfO2 Thin FilmsMikolajick, T., Mueller, J., Mueller, S., Riedel, S., Schroeder, U., Singh, A. & Sundqvist, J., 2012, In: Advanced functional materials. 22, 11, p. 2412-2417, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulationRoll, G., Jakschik, S., Goldbach, M., Wachowiak, A., Mikolajick, T. & Frey, L., 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application. 6210165Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Metal oxide memories based on thermochemical and valence change mechanismsHwang, C. S., Inoue, I. H., Mikolajick, T. & Yang, J. J., 2012, In: MRS bulletin. 37, p. 131–137Electronic (full-text) versionResearch output: Contribution to journal > Research article