Publications
675 Entries
2012
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Understanding High-Yield Catalyst-Free Growth of Horizontally Aligned Single-Walled Carbon Nanotubes Nucleated by Activated C60 Species, Dec 2012, In: ACS Nano. 6, 12, p. 10825-10834, 10 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Amorphous Carbon under 80 kV Electron Irradiation: A Means to Make or Break Graphene, 2 Nov 2012, In: Advanced Materials. 24, 41, p. 5630-5635, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Letter
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Thermally activated crystallization of Nb 2O 5 grown on Pt electrode, Aug 2012, In: Applied Physics A: Materials Science and Processing. 108, 2, p. 431-437, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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CVD-Grown Horizontally Aligned Single-Walled Carbon Nanotubes: Synthesis Routes and Growth Mechanisms, 9 Jul 2012, In: Small. 8, 13, p. 1973-1992, 20 p.Electronic (full-text) versionResearch output: Contribution to journal > Review article
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An investigation of the electrical properties of the interface between pyrolytic carbon and silicon for Schottky diode applications, 15 Jun 2012, In: Journal of applied physics. 111, 12, 124511Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Low-cost caesium phosphate as n-dopant for organic light-emitting diodes, 1 Apr 2012, In: Journal of applied physics. 111, 7, 074502Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Reconfigurable silicon nanowire transistors, 11 Jan 2012, In: Nano letters. 12, 1, p. 119-124, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
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Cool silicon ICT energy efficiency enhancements, 2012, IEEE 2012 International Semiconductor Conference Dresden-Grenoble, ISCDG 2012. Institute of Electrical and Electronics Engineers (IEEE), 4 p., 6360004Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG, 2012, VLSIElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
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Ferroelectricity in Simple Binary ZrO2 and HfO2, 2012, In: Nano letters. 12, 8, p. 4318–4323Electronic (full-text) versionResearch output: Contribution to journal > Research article