Publications

2012

• Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin filmsBerger, L., Jakschik, S., Klemm, V., Mahne, H., Martin, D., Mikolajick, T., Rafaja, D. & 1 others, 2012, In: Solid-state electronics. 72, p. 73-77Electronic (full-text) versionResearch output: Contribution to journal > Research article
• HfO 2-based ferroelectric field-effect transistors with 260 nm channel length and long data retentionYurchuk, E., Müller, J., Hoffmann, R., Paul, J., Martin, D., Boschke, R., Schlösser, T. & 6 others, 2012, 2012 4th IEEE International Memory Workshop. Institute of Electrical and Electronics Engineers (IEEE)Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Incipient Ferroelectricity in Al-Doped HfO2 Thin FilmsMikolajick, T., Mueller, J., Mueller, S., Riedel, S., Schroeder, U., Singh, A. & Sundqvist, J., 2012, In: Advanced functional materials. 22, 11, p. 2412-2417, 6 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulationRoll, G., Jakschik, S., Goldbach, M., Wachowiak, A., Mikolajick, T. & Frey, L., 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application. 6210165Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Metal oxide memories based on thermochemical and valence change mechanismsHwang, C. S., Inoue, I. H., Mikolajick, T. & Yang, J. J., 2012, In: MRS bulletin. 37, p. 131–137Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Molecular beam deposited ZrO2 on GaN and Si/TiN: A comparisonFreese, A., Grube, M., Geidel, M., Adolphi, B., Wachowiak, A., Schmult, S. & Mikolajick, T., 2012Research output: Contribution to conferences > Paper
• Non-volatile data storage in HfO₂-based ferroelectric FETsSchroeder, U., Yurchuk, E., Mueller, S., Mueller, J., Slesazeck, S., Schloesser, T., Trentzsch, M. & 1 others, 2012, 2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings, NVMTS 2012. p. 60-63, 4 p., 6632863Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• OFF-state induced threshold voltage relaxation after PBTI stressKupke, S., Knebel, S., Roll, G., Slesazeck, S., Mikolajick, T., Krause, G. & Kurz, G., 2012, 2012 IEEE International Integrated Reliability Workshop (IIRW). Institute of Electrical and Electronics Engineers (IEEE), p. 95-98, 4 p., 6468928Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Reliability of SrRuO3/SrTiO3/SrRuO3 Stacks for DRAM ApplicationsBottger, U., Knebel, S., Kupke, S., Mikolajick, T., Schmelzer, S. & Schroeder, U., 2012, In: IEEE electron device letters. 33, 12, p. 1699 - 1701Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Silicon and germanium nanoclusters embedded in zirconium dioxide matricesBenner, F., Haas, S., Schneider, F., Klemm, V., Schreiber, G., Von Borany, J., Mikolajick, T. & 1 others, 2012, In: ECS Journal of Solid State Science and Technology. 1, 6, p. N135-N138Electronic (full-text) versionResearch output: Contribution to journal > Research article