Publications

2011

• Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applicationsMüller, J., Böscke, T., Bräuhaus, D., Schröder, U., Böttger, U., Sundqvist, J., Kcher, P. & 2 others, 2011, In: Applied physics letters. 99, 11, 112901 Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Low temperature CVD growth of graphene nano-flakes directly on high K dielectricsRümmeli, M. H., Bachmatiuk, A., Dianat, A., Scott, A., Bor̈rnert, F., Ibrahim, I., Zhang, S. & 3 others, 2011, Fundamentals of Low-Dimensional Carbon Nanomaterials. p. 19-24, 6 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Optical characterization of three-dimensional structures within a DRAM capacitorKrupinski, M., Kasic, A., Hecht, T., Klude, M., Heitmann, J., Erben, E. & Mikolajick, T., 2011, Optical Measurement Systems for Industrial Inspection VII. 80823YElectronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Phase transitions in ferroelectric silicon doped hafnium oxideBoscke, T. S., Bottger, U., Brauhaus, D., Mikolajick, T., Muller, J., Schroder, U. & Teichert, S., 2011, In: Applied physics letters. 99, 112904 Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Polarity behavior and adjustment in silicon nanowire Schottky junction transistorsWeber, W. M., Heinzig, A. & Mikolajick, T., 2011, Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3. 3 ed., p. 93-101, 9 p.Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• RF-Magnetron Sputtered Dielectric Backside PassivationBenner, F., Tarasova, M., Moll, P., Jakschik, S., Dirnstorfer, I., Knaut, M. & Mikolajick, T., 2011, Proceedings of the 26th European Photovoltaic Solar Energy ConferenceResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution

2010

• The influence of bottom oxide thickness on the extraction of the trap energy distribution in SONOS (silicon-oxide-nitride-oxide-silicon) structuresBernert, K., Oestreich, C., Bollmann, J. & Mikolajick, T., Jul 2010, In: Applied Physics A: Materials Science and Processing. 100, 1, p. 249-255, 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Improved high-temperature etch processing of high-k metal gate stacks in scaled TANOS memory devicesPaul, J., Beyer, V., Czernohorsky, M., Beug, M. F., Biedermann, K., Mildner, M., Michalowski, P. & 5 others, May 2010, In: Microelectronic Engineering. 87, 5-8, p. 1629-1633, 5 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• An empirical model describing the MLC retention of charge trap flash memoriesMelde, T., Hoffmann, R., Yurchuk, E., Paul, J. & Mikolajick, T., 2010, 2010 IEEE International Integrated Reliability Workshop Final Report, IIRW 2010. p. 118-120, 3 p., 5706502Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution
• Carbon junction implant: Effect on leakage currents and defect distributionRoll, G., Jakschik, S., Goldbach, M., Mikolajick, T. & Frey, L., 2010, 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. p. 329-332, 4 p., 5618224Electronic (full-text) versionResearch output: Contribution to book/conference proceedings/anthology/report > Conference contribution