Christoforos Theodorou: "Noise and variability in advanced microelectronic devices and circuits"

Interested guests are welcome to attend the lecture on Tuesday, 11th June 2024 at 11:00 (CEST) in Toepler-Bau of TU Dresden (Raum TOE/315) and to meet Dr. Christoforos Theodorou, a CNRS researcher at CROMA laboratory, Grenoble, France. The title of the talk is „Noise and variability in advanced microelectronic devices and circuits“ and it will end at 12:00 latest.

If you would like to attend the lecture online, please use the following  Link to the video conference.

Abstract:

Two of the most determining limiting factors for the performance of an electronic circuit are the level of intrinsic noise and the percentage of yield within the acceptable limits of operation. In particular, the excess (frequency-dependent) noise can be detrimental to the dynamic stability and linearity, especially when it is characterized by very sudden, high-amplitude pulse-like changes, as in the case of Random Telegraph Noise (RTN). The latter, along with low-frequency noise (LFN, also called 1/f noise), are caused by the trapping/de-trapping of carriers at volume or states of semiconductor devices. In parallel with these noise phenomena, and especially in memory switching devices such as resistive memories, there is a very significant variation in electrical parameters and behavior from device-to-device, which can seriously limit the circuit design possibilities, as well as the final circuit-to-circuit variability. These types of noise and variability become even more significant at a micro- or nano-scale level because their amplitude is inversely proportional to the device area. In this talk, the origin of these effects will be discussed for devices ranging from advanced transistors to OxRAM-based memristors, along with methods to experimentally study them and model them, in order to reach more precise and reliable circuit-level simulations. Moreover, a short presentation of our laboratory’s research activities will also be addressed.