Publikationen

1 bis 10 von 149 Einträgen

Menzel, S.; Siemon, A.; Ascoli, A.; Tetzlaff, R.: Requirements and Challenges for Modelling Redox-based Memristive Devices. In: IEEE Int. Symp. Circuits and Systems (ISCAS) (2018)

Ascoli, A.; Baumann, D.; Tetzlaff, R.; Chua, L.O.; Hild, M.: Mem-adaptive computing – Part II: circuit design,. In: IEEE Int. Symp. Circuits and Systems (ISCAS) (2018)

Ascoli, A.; Baumann, D.; Tetzlaff, R.; Chua, L.O.; Hild, M.: Mem-adaptive computing – Part I: theory. In: IEEE Int. Symp. Circuits and Systems (2018)

Ascoli, A.; Messaris, Y.; Tetzlaff, R.; Chua, L.O.: CNNs with bistable-like non-volatile memristors: a novel mem-computing paradigm for the IoT era. In: IEEE Int. Conf. on Electronic Circuits and Systems (ICECS) (2018)

Müller, Jens; Tetzlaff, Ronald: Comparison of numerical integration methods for digital hardware implementations. In: CNNA 2018; The 16th International Workshop on Cellular Nanoscale Networks and their Applications (2018)

Tetzlaff, R.; Ascoli, A.; Messaris, Y.; Ielmini, D.; Chua, L.O.: Mem-computing in M-CNN with real Hafnium oxide memristors. In: IEEE Trans. on Circuits and Systems–I (2018)

Biolek, Z.; Biolek, D.; Biolkova, V.; Ascoli, A.; Tetzlaff, R.: About v-i pinched hysteresis of some non- memristive systems. In: Journal on Mathematical Problems in Engineering, Hindawi (2018), S. 1–10

Ntinas, V.; Ascoli, A.; Tetzlaff, R.; Sirakoulis, G.Ch.: A complete analytical solution for the on and off dynamic equations of a TaO memristor,. In: IEEE Trans. on Circuits and Systems–II (2018)

Weiher, M.; Herzig, M.; Tetzlaff, R.; Ascoli, A.; Mikolajick, T.; Slesazeck, S.: Pattern formation with local active S-type NbOx memristors. In: IEEE Trans. on Circuits and Systems–I: Regular Papers (2018)

Herzig, M.; Weiher, M.; Ascoli, A.; Tetzlaff, R.; Mikolajick, T.; Slesazeck, S.: Improvement of NbOx-based threshold switching devices by implementing multilayer stacks. In: IEEE Trans. on Electron Devices (2018)

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Jens Müller
Last modified: Nov 01, 2017