Publications

2026

• A Compendium of Logic Gates Based on Reconfigurable Three-Independent-Gate Transistors Realized in FDSOI HardwareMartinez, J. P., He, Y., Galderisi, G., Sessi, V., Bhattacharjee, N., Baars, P., Poenisch, K. & 6 others, 23 Mar 2026, In: Advanced electronic materialsElectronic (full-text) versionResearch output: Contribution to journal > Research article
• Technology Roadmap of Bioinspired Computing HardwareWang, S., Li, Z., Pei, M., Ren, Q., Deng, M., Ang, K. W., Ascoli, A. & 66 others, 17 Mar 2026, In: ACS nano. 20, 10, p. 8102-8163, 62 p.Electronic (full-text) versionResearch output: Contribution to journal > Review article
• Readout Current in HZO-Based Bilayer FTJs: Physical Mechanisms and Design InsightSegatto, M., Puglisi, F. M., Driussi, F., Lizzit, D., Carpentieri, L., Slesazeck, S., Mikolajick, T. & 1 others, 16 Mar 2026, In: IEEE Transactions on Electron Devices. 7 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Formation of a passivation layer via oxygen plasma oxidation for GaN-on-GaN regrowthBilke, M. L., Gärtner, J., Großer, A., Mikolajick, T., Ruf, A. & Schmult, S., 12 Mar 2026, In: Thin solid films. 839, 5 p., 140910Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Junctionless Silicon Nanowire Transistors without the Use of Impurity DopingNagarajan, S., König, D., Ratschinski, I., Galderisi, G., Shams, S., Mikolajick, T., Hiller, D. & 1 others, 10 Mar 2026, In: ACS nano. 20, 9, p. 7508-7517, 10 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Does a Morphotropic Phase Boundary Exist in Zr_xHf_1-xO₂-Based Thin Films?Vishnumurthy, P., Ganser, R., Kim, D. G., Jeon, I., Jung, C. H., Lim, H., Mikolajick, T. & 3 others, 5 Mar 2026, In: Advanced functional materials. 36, 19, 12 p., e22802Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO₂-Based MemristorsWu, C., Shen, H., Schroedter, R., Peng, C., Hoffman, H., Slesazeck, S., Tetzlaff, R. & 2 others, 18 Feb 2026, In: Advanced electronic materials. 12, 4, e00644Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Exfoliated-MoS₂ Gradual Resistive Switching Devices as Artificial SynapsesFejzaj, D., Schroedter, R., Mikolajick, T. & Heinzig, A., 15 Feb 2026, In: Advanced electronic materials. 11 p., e00691Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Nitride Ferroelectric Domain Wall Memory for Next-Generation ComputingSchönweger, G., Dasenbrook, D., Kyoushi, N., Guido, R., Petraru, A., Mikolajick, T., Schröder, U. & 2 others, 4 Feb 2026, In: Advanced electronic materials. 12, 3, e00616Electronic (full-text) versionResearch output: Contribution to journal > Research article
• Ultra-Low Voltage Reconfigurable FETs in 22nm FDSOI Technology Enabling Dynamic Circuit Obfuscation for Embedded SecurityHe, Y., Holemadlu, A., Bhattacharjee, N., Galderisi, G., Sessi, V., Martinez, J., Wijvliet, M. & 12 others, 15 Jan 2026, In: IEEE journal of the Electron Devices Society. 8 p.Electronic (full-text) versionResearch output: Contribution to journal > Research article